{"title":"Physical mechanisms involved during transient irradiation of a 1300 nm laser diode","authors":"E. Pailharey, J. Baggio, C. D'hose, I. Musseau","doi":"10.1109/RADECS.1999.858622","DOIUrl":null,"url":null,"abstract":"The behavior of a commercial 1300 nm laser diode under transient irradiations is studied to validate the use of an optical data link in a radiative environment. A Nd:YAG laser is used to simulate the irradiation without any permanent damage. Two specific wavelengths are selected: 1064 nm which allows a selective excitation of the laser cavity simulating transient effects of a single particle and 532 nm which interacts with the whole device. The temporal response of the diode is first observed and its shape is interpreted as a function of the physical structure of the device. Then the variation of the time of return to equilibrium after a perturbation is presented as a function of bias current. The limitations on the optical links for both analogue and digital applications are then discussed.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The behavior of a commercial 1300 nm laser diode under transient irradiations is studied to validate the use of an optical data link in a radiative environment. A Nd:YAG laser is used to simulate the irradiation without any permanent damage. Two specific wavelengths are selected: 1064 nm which allows a selective excitation of the laser cavity simulating transient effects of a single particle and 532 nm which interacts with the whole device. The temporal response of the diode is first observed and its shape is interpreted as a function of the physical structure of the device. Then the variation of the time of return to equilibrium after a perturbation is presented as a function of bias current. The limitations on the optical links for both analogue and digital applications are then discussed.