同步辐射MOS晶体管的微辐照实验

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858591

J. Autran, P. Masson, N. Freud, C. Raynaud, C. Riekel

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引用次数: 2

摘要

通过将x射线同步辐射聚焦到微米级分辨率的栅极电极上，在MOS晶体管中实现了空间分辨的总剂量衰减。利用电流电压和电荷泵浦测量，以及光学表征(光子发射)和准击穿测量，分析了由此产生的永久性退化对器件电性能的影响。

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Micro-irradiation experiments in MOS transistors using synchrotron radiation

Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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