Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858610

M. Marceau, H. Huillet, P. Marchand

引用次数: 4

Abstract

This article describes the approach used to design a hardened power supply capable of operating to a total gamma irradiation dose of 1Mrad(Si). Pre-irradiation of power MOSFETs proved to be necessary, and the paper also discusses the effects of this treatment.

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在电源中使用预辐照的商用mosfet，使其能够承受伽马辐射

本文描述了用于设计能够在总γ照射剂量为1Mrad(Si)的情况下工作的硬化电源的方法。对功率场效应管进行预辐照是必要的，并讨论了预辐照的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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