部分耗尽SOI动态阈值电压MOS (DTMOS)在极低电源电压(0.6-1 V)下的总剂量行为

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858600

V. Ferlet-Cavrois, P. Paillet, O. Musseau, J. Leray, O. Faynot, C. Raynaud, J. Pelloie

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引用次数: 10

摘要

DTMOS架构特别适合非常低的电源电压应用(0.6-1V)。本文介绍了采用部分耗尽0.25 /spl mu/m SOI技术加工的DTMOS器件。分析了它们在总剂量照射下的电学行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)

The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1V). This paper presents DTMOS devices processed with a partially depleted 0.25 /spl mu/m SOI technology. It analyses their electrical behavior under total dose irradiation.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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