商用SiGe BiCMOS技术的总剂量硬度

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858617

N. V. van Vonno, R. Lucas, D. Thornberry

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引用次数: 4

摘要

在过去的十年中，SiGe HBT技术已经从实验室发展到实际的商业应用。当集成到CMOS工艺中时，该技术在低成本空间系统中具有潜在的应用前景。在本文中，我们报告了通过商业代工厂可获得的SiGe/CMOS工艺的总电离剂量测试结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total dose hardness of a commercial SiGe BiCMOS technology

Over the past decade SiGe HBT technology has progressed from the laboratory to practical commercial applications. When integrated into a CMOS process, this technology has potential applications in low-cost space systems. In this paper, we report results of total ionizing dose testing of a SiGe/CMOS process accessible through a commercial foundry.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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