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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献

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Response of MOSFETs from DMILL technology to high total dose levels DMILL技术的mosfet对高总剂量水平的响应
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858595
J.M. Armani, C. Brisset, F. Joffre, M. Dentan
{"title":"Response of MOSFETs from DMILL technology to high total dose levels","authors":"J.M. Armani, C. Brisset, F. Joffre, M. Dentan","doi":"10.1109/RADECS.1999.858595","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858595","url":null,"abstract":"We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1MGy(Si)/sup 1/ with a /sup 60/Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134045927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Impact of technology scaling in SOI back-channel total dose tolerance, a 2-D numerical study using self-consistent oxide code 技术尺度对SOI后通道总剂量容限的影响，基于自洽氧化物编码的二维数值研究
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858602
J. Leray, P. Paillet, V. Ferlet-Cavrois, C. Tavernier, K. Belhaddad, O. Penzin
{"title":"Impact of technology scaling in SOI back-channel total dose tolerance, a 2-D numerical study using self-consistent oxide code","authors":"J. Leray, P. Paillet, V. Ferlet-Cavrois, C. Tavernier, K. Belhaddad, O. Penzin","doi":"10.1109/RADECS.1999.858602","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858602","url":null,"abstract":"A new 2D-self-consistent code has been developed and is applied to the understanding of charge trapping in SOI buried oxides and its effect on back-channel MOS leakage in SOI transistors. 2D effects, field-collapse and field-enhancement are observed. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. In thinner oxides, 2D effects are observed for example, the onset of back-channel leakage current is found to be related to the ratio of the channel length on the oxide thickness.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117267446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Ageing of permanent magnet devices at the ESRF ESRF中永磁器件的老化
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858589
P. Van Vaerenbergh, J. Chavanne, P. Elleaume
{"title":"Ageing of permanent magnet devices at the ESRF","authors":"P. Van Vaerenbergh, J. Chavanne, P. Elleaume","doi":"10.1109/RADECS.1999.858589","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858589","url":null,"abstract":"This paper reviews two typical cases of permanent magnet demagnetization which have occurred during the seven years of X-ray beam delivery at the ESRF. The first case occurred during the ESRF commissioning and was due to a miss-steered electron beam. The second case was seen over a long period and was due to the routinely produced radiation (i.e. X-rays, associated with the parasitic radiation). The first process is illustrated with an experiment where various grades of permanent magnets have been voluntarily irradiated with an electron beam in order to study their susceptibility.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124848604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process MOS结构CCD过程中中子辐照缺陷的DLTS和电容瞬态研究
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858636
A. Ahaitouf, E. Losson, J. Charles
{"title":"DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process","authors":"A. Ahaitouf, E. Losson, J. Charles","doi":"10.1109/RADECS.1999.858636","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858636","url":null,"abstract":"The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to deep levels created in the semiconductor and two peaks (4 and 5) due to minority carrier generation. Levels 1 and 2 are reported in the literature and it was suggested that the level 2 may be due to the divacancy. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128027244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The potential of the radiation effects investigations on the accelerator facilities at Gatchina Gatchina加速器设施辐射效应研究的潜力
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858567
N. K. Abrossimov, K. N. Ermakov, E. Ivanov, V. Lebedev, Y. Mironov, V. V. Pashuk, G. Riabov, V.M. Smolin, M. Tverskoy, S. Duzellier
{"title":"The potential of the radiation effects investigations on the accelerator facilities at Gatchina","authors":"N. K. Abrossimov, K. N. Ermakov, E. Ivanov, V. Lebedev, Y. Mironov, V. V. Pashuk, G. Riabov, V.M. Smolin, M. Tverskoy, S. Duzellier","doi":"10.1109/RADECS.1999.858567","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858567","url":null,"abstract":"The accelerator facilities at Gatchina which are used both for the basic physics purposes and for investigation of the radiation effects are described. The beam parameters and diagnostic methods for 1 GeV synchrocyclotron, 14 MeV neutron generator and 1.8 MeV electrostatic accelerator are presented.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127218470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Proton-induced single event upset characterization of a 1 Giga-sample per second analog to digital converter 质子诱导的单事件扰动表征每秒1千兆样本的模数转换器
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858575
R. Reed, P. Marshall, M. Carts, G.L. Henegar, R. Katz
{"title":"Proton-induced single event upset characterization of a 1 Giga-sample per second analog to digital converter","authors":"R. Reed, P. Marshall, M. Carts, G.L. Henegar, R. Katz","doi":"10.1109/RADECS.1999.858575","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858575","url":null,"abstract":"Some high-speed space-borne data acquisition and dissemination systems require conversion of an analog data signal into a digital signal for on-board digital processing. The NASA Geoscience Laser Altimeter System (GLAS) is one such instrument. It uses the Signal Processing Technologies SPT7760 to convert an analog signal from the laser altimeter. The analog data is converted by the SPT7760 at 1 Giga-sample per second (Gsps). These types of data handling applications can typically withstand a relatively high bit error ratio (BER). In this paper, we describe the a novel approach for proton-induced single event upset characterization of the SPT760. Data is given for operating sample rates from 125 Msps to 1 Gsps.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121392264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Pre- and post-flight radiation performance evaluation of the space GPS receiver (SGR) 空间GPS接收机(SGR)飞行前后辐射性能评估
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858618
M. Oldfield, C. Underwood, M. Unwin, R. Harboe-Sørensen, V. Asenek
{"title":"Pre- and post-flight radiation performance evaluation of the space GPS receiver (SGR)","authors":"M. Oldfield, C. Underwood, M. Unwin, R. Harboe-Sørensen, V. Asenek","doi":"10.1109/RADECS.1999.858618","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858618","url":null,"abstract":"SSTL (Surrey Satellite Technology Ltd.), in collaboration with ESA/ESTEC, have recently developed a state-of-the-art, low cost GPS (Global Positioning System) receiver payload for use on small satellites. The Space GPS Receiver (SGR) is currently flying in low earth orbit (LEO) on the TMSAT micro-satellite and the UoSAT-12 mini-satellite and will also be flown on the TiungSAT-l microsatellite, and ESA's PROBA satellite. The SGR has demonstrated autonomous on-board positioning and has provided an experimental test-bed for evaluating spacecraft attitude determination algorithms. In order to reduce development time and costs, the SGR consists solely of industry standard COTS (commercial off-the-shelf) devices. This paper describes the ground-based radiation testing of several payload-critical COTS devices used in the SGR payload and describes its on-orbit performance.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130794173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Radiation-induced absorption and luminescence in specially hardened large-core silica optical fibers 特殊硬化大芯石英光纤的辐射诱导吸收和发光
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858627
A. L. Tomashuk, K. Golant, E. Dianov, O. Medvedkov, O.A. Plaksin, V. A. Stepanov, P. A. Stepanov, P. V. Demenkov, V. Chernov, S. Klyamkin
{"title":"Radiation-induced absorption and luminescence in specially hardened large-core silica optical fibers","authors":"A. L. Tomashuk, K. Golant, E. Dianov, O. Medvedkov, O.A. Plaksin, V. A. Stepanov, P. A. Stepanov, P. V. Demenkov, V. Chernov, S. Klyamkin","doi":"10.1109/RADECS.1999.858627","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858627","url":null,"abstract":"Radiation-induced absorption and luminescence are measured in the visible spectral region in H/sub 2/-loaded and as-drawn fibers with KU and KS-4V silicas in the core in the process of /spl gamma/-irradiation (/sup 60/Co-source). The induced absorption in H/sub 2/-loaded fibers is shown to be much lower than in as-drawn fibers, at least up to 1.2 MG.y A 'blue' band prevails in the luminescence spectra of all the fibers. Its intensity is greater in a KS-4V fiber than in a KU fiber. It is also somewhat greater in H/sub 2/-loaded fibers than in unloaded ones. The luminescence lifetime in a KU fiber has been measured under excitation with a pulsed reactor to be 100 /spl mu/s at /spl lambda/=88 nm and 60 /spl mu/s at /spl lambda/=633 nm. It is concluded that the 'blue' radioluminescence cannot be attributed either to relaxation of the oxygen-deficient center or to Cerenkov emission. A fabrication technology of radiation-hardened H/sub 2/-containing fibers with a hermetic aluminum coating is reported. Such fibers appear to be the best candidates for various applications in radiation environments.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134159548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Radiation hardening of power MOSFETs using electrical stress 利用电应力对功率mosfet进行辐射硬化
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858609
C. Picard, C. Brisset, O. Quittard, A. Hoffmann, F. Joffre, J. Charles
{"title":"Radiation hardening of power MOSFETs using electrical stress","authors":"C. Picard, C. Brisset, O. Quittard, A. Hoffmann, F. Joffre, J. Charles","doi":"10.1109/RADECS.1999.858609","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858609","url":null,"abstract":"Application of high voltage electrical stresses to NVDMOSFET-type COTS transistors was explored as an original hardening option. Such pre-irradiation treatment enhances transistor response to total dose.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122371485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Probability model for cumulative solar proton event fluences 累积太阳质子事件影响的概率模型
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858539
M. Xapsos, G. Summers, J. Barth, E. Stassinopoulos, E. Burke
{"title":"Probability model for cumulative solar proton event fluences","authors":"M. Xapsos, G. Summers, J. Barth, E. Stassinopoulos, E. Burke","doi":"10.1109/RADECS.1999.858539","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858539","url":null,"abstract":"A new model of cumulative solar proton event fluences is presented. It allows the expected total fluence to be calculated for a given confidence level and for time periods corresponding to space missions. The new model is in reasonable agreement with the JPL91 model over common proton energy range of >1 to >60 MeV. The current model extends this energy range to >300 MeV. It also incorporates more recent data which tends to make predicted fluences slightly higher than JPL91. For the first time, an analytic solution is obtained for this problem of accumulated fluence over a mission. Several techniques are used, including maximum entropy, to show the solution is well represented as a lognormal probability distribution of the total fluence. The advantages are that it is relatively easy to work with and to update as more solar proton event data become available.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127758461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 124
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