Response of MOSFETs from DMILL technology to high total dose levels

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858595

J.M. Armani, C. Brisset, F. Joffre, M. Dentan

引用次数: 4

Abstract

We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1MGy(Si)/sup 1/ with a /sup 60/Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation.

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DMILL技术的mosfet对高总剂量水平的响应

我们研究了用DMILL工艺制作的MOS晶体管的响应，用/sup 60/Co源照射总剂量为1MGy(Si)/sup 1/。结果表明，参数变化仍然有限，因此授权在辐射水平非常高的环境中使用该技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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