MOS结构CCD过程中中子辐照缺陷的DLTS和电容瞬态研究

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858636

A. Ahaitouf, E. Losson, J. Charles

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引用次数: 1

摘要

本文的目的是研究中子辐照对PMOS电容器和nmosfet的影响。通过电容瞬态C(t)测量、DLTS光谱和光学DLTS (ODLTS)来表征诱导缺陷。DLTS光谱呈现三个峰(1、2和3)，这是由于在半导体中产生的深能级，两个峰(4和5)是由于少数载流子的产生。文献中报道了第1级和第2级，有人认为第2级可能是由于距离。在辐照后的ODLTS光谱上还观察到另外两个少数载流子陷阱。这可以解释电容瞬态测量所观察到的少数载流子产生寿命的减少。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to deep levels created in the semiconductor and two peaks (4 and 5) due to minority carrier generation. Levels 1 and 2 are reported in the literature and it was suggested that the level 2 may be due to the divacancy. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements.

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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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