Radiation hardening of power MOSFETs using electrical stress

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858609

C. Picard, C. Brisset, O. Quittard, A. Hoffmann, F. Joffre, J. Charles

引用次数: 7

Abstract

Application of high voltage electrical stresses to NVDMOSFET-type COTS transistors was explored as an original hardening option. Such pre-irradiation treatment enhances transistor response to total dose.

查看原文本刊更多论文

利用电应力对功率mosfet进行辐射硬化

探讨了高压电应力在nvdmosfet型COTS晶体管中的应用，作为一种原始的硬化选择。这种辐照前处理提高了晶体管对总剂量的响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

自引率

0.00%

发文量