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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献

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Restructuring of the flash A/D converter to improve SEU rad tolerance 重组闪存A/D转换器，以提高SEU辐射容忍度
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858607
T. Monnier, F. M. Roche, F. Corbière
{"title":"Restructuring of the flash A/D converter to improve SEU rad tolerance","authors":"T. Monnier, F. M. Roche, F. Corbière","doi":"10.1109/RADECS.1999.858607","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858607","url":null,"abstract":"The purpose of this work is to present how structural changes in the conventional Flash Analog to Digital Converter can secure it for a harsh radiation environment. The method consists in a coupling of two complementary techniques: a robust reconfiguration of the logical structure joined to a design hardening of the individual blocks. This approach preserves the ADC performances.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117269125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Gamma irradiation facilities for radiation tolerance assessment of components and systems at SCK/spl middot/CEN SCK/spl middot/CEN用于组件和系统辐射耐受性评估的伽马辐照设施
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858566
S. Coenen, M. Decréton
{"title":"Gamma irradiation facilities for radiation tolerance assessment of components and systems at SCK/spl middot/CEN","authors":"S. Coenen, M. Decréton","doi":"10.1109/RADECS.1999.858566","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858566","url":null,"abstract":"This paper presents the different gamma irradiation facilities available at SCK/spl middot/CEN. With gamma dose rates ranging from 1 Gy/h up to 50 kGy/h, extensive environmental control and on-line instrumentation possibilities, they offer ideal test environments for the radiation tolerance assessment of components and systems for many applications where radiation tolerance is a concern.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116173924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effects induced by gamma radiation on the noise in junction field-effect transistors belonging to monolithic processes 辐射对单片工艺结场效应晶体管噪声的影响
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858596
P. Manfredi, L. Ratti, V. Re, V. Speziali
{"title":"Effects induced by gamma radiation on the noise in junction field-effect transistors belonging to monolithic processes","authors":"P. Manfredi, L. Ratti, V. Re, V. Speziali","doi":"10.1109/RADECS.1999.858596","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858596","url":null,"abstract":"The effects of /spl gamma/-rays on the noise characteristics of junction field-effect transistors belonging to three monolithic technologies have been investigated. A substantially different behavior of the radiation-induced noise in N and P-channel JFETs was observed. This results in interesting design considerations for low-noise circuits.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124084845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility 离子束测试的SRAM SEE横截面与使用新的皮秒脉冲激光设备获得的横截面的比较
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858565
R. Jones, A. Chugg, C. Jones, P. H. Duncan, Chris Dyer, C. Sanderson
{"title":"Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility","authors":"R. Jones, A. Chugg, C. Jones, P. H. Duncan, Chris Dyer, C. Sanderson","doi":"10.1109/RADECS.1999.858565","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858565","url":null,"abstract":"A new pulsed laser facility has been developed to extend laser testing techniques to generate upset cross-section curves. The objective has been to establish an economical laser-based bulk screening capability for SEE susceptibility.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128633686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Proton damage in linear and digital optocouplers 线性和数字光耦合器中的质子损伤
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858621
A. Johnston, B. Rax
{"title":"Proton damage in linear and digital optocouplers","authors":"A. Johnston, B. Rax","doi":"10.1109/RADECS.1999.858621","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858621","url":null,"abstract":"Fundamental differences in design influence the way that linear and digital optocouplers are degraded by radiation. Linear optocouplers are more affected by current drive conditions because the detector operates in a high-injection region when the LED produces normal light output, and do not have the extra operating margin that is inherent in digital optocouplers. Although LED degradation is often the dominant degradation mechanism in space environments, degradation of optocouplers with improved LEDs is limited by photoresponse degradation. Phototransistor gain has a relatively minor effect except at very high radiation levels.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127274573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Generation and confinement of mobile charges in buried oxide of SOI substrates SOI衬底埋藏氧化物中移动电荷的产生和限制
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858590
O. Musseau, S. Krawiec, P. Paillet, A. Courtot-Descharles, O. Gruber
{"title":"Generation and confinement of mobile charges in buried oxide of SOI substrates","authors":"O. Musseau, S. Krawiec, P. Paillet, A. Courtot-Descharles, O. Gruber","doi":"10.1109/RADECS.1999.858590","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858590","url":null,"abstract":"We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. Under standard preparation techniques, both fixed and mobile positive charges are generated in the buried oxide. A series of new experimental data investigates the ratio of fixed to mobile charges. The analysis of charge homogeneity within the sample reveals the basic role of diffusion in the oxide. Experimental data and atomic scale modeling emphasize the importance of Si-SiO/sub 2/ interface.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130963714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Whistler waves induced by relativistic electrons and limiting trapped electrons flux 由相对论性电子和限制捕获电子通量引起的惠斯勒波
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858538
E. Le Bel, F. Simonet, R. Ciurea-Borcia, G. Matthieussent, J. Solomon
{"title":"Whistler waves induced by relativistic electrons and limiting trapped electrons flux","authors":"E. Le Bel, F. Simonet, R. Ciurea-Borcia, G. Matthieussent, J. Solomon","doi":"10.1109/RADECS.1999.858538","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858538","url":null,"abstract":"Energetic electrons are injected in the magnetosphere during solar eruptions or by artificial means, increasing the electron fluxes in Van Allen belts. The presence of relativistic electrons in the magnetosphere induces whistler wave excitation due to various kinds of instabilities, such as temperature anisotropy, loss cone or beam type instability. Such studies on whistler wave excitation induced by energetic particles in the magnetospheric plasma are generally carried out for nonrelativistic electrons (CRRES, ARAKS, ECHO, SEPAC, Spacelab missions...). In this paper, first results that we have obtained concerning the whistler mode excitation for parallel and oblique propagation, and for relativistic electrons, are presented both for temperature anisotropy and beam type instabilities. The theoretical formalism that we have used to derive the wave dispersion equation is first described.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130494544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the detection efficiency of polycrystalline diamond detectors with a heavy ion microprobe 重离子微探针对多晶金刚石探测器探测效率的研究
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858561
M. Schloegl, B. Fischer
{"title":"Investigation of the detection efficiency of polycrystalline diamond detectors with a heavy ion microprobe","authors":"M. Schloegl, B. Fischer","doi":"10.1109/RADECS.1999.858561","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858561","url":null,"abstract":"The influence of the crystal structure of chemical vapour deposition (CVD) diamonds on their charge collection efficiency has been investigated by using a heavy ion microprobe with C ions of 5.9 MeV/u. Charge collection maps and pulse-height spectra are discussed. A comparison of the charge collection maps with the corresponding secondary electron image shows that not only the grain boundaries are responsible for the poor charge collection efficiency, but also the single CVD diamond crystal is trapping a significant part of the generated charge.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127910771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Response of SIMOX and Unibond buried oxides: trapping and detrapping properties SIMOX和单键埋藏氧化物的响应:捕获和脱除特性
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858603
P. Paillet, V. Ferlet-Cavrois, J. Schwank, D. Fleetwood
{"title":"Response of SIMOX and Unibond buried oxides: trapping and detrapping properties","authors":"P. Paillet, V. Ferlet-Cavrois, J. Schwank, D. Fleetwood","doi":"10.1109/RADECS.1999.858603","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858603","url":null,"abstract":"X-ray induced charge trapping and detrapping properties are investigated in SIMOX and Unibond(R) buried oxides. A very deep trapping of both holes and electrons is evidenced in these materials. The importance of electron compensation, both during irradiation and anneal, is shown to determine the anneal properties.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126234065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison between ground tests and flight data for two static 32 KB memories 两种静态32kb存储器的地面试验与飞行数据比较
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858646
P. Cheynet, R. Valazco, R. Ecoffet, S. Duzellier, J. David, J.G. Loquet
{"title":"Comparison between ground tests and flight data for two static 32 KB memories","authors":"P. Cheynet, R. Valazco, R. Ecoffet, S. Duzellier, J. David, J.G. Loquet","doi":"10.1109/RADECS.1999.858646","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858646","url":null,"abstract":"The microelectronics and photonics testbed (MPTB) carrying twenty-four experiments on-board a scientific satellite has been in a high radiation orbit since November 1997. This paper presents single event Upset flight results on two commercial static RAMs includes in two of the MPTB experiments.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120962827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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