辐射对单片工艺结场效应晶体管噪声的影响

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858596

P. Manfredi, L. Ratti, V. Re, V. Speziali

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引用次数: 2

摘要

研究了/spl γ射线对三种单片技术结场效应晶体管噪声特性的影响。观察到N沟道和p沟道jfet中辐射诱导噪声的本质不同。这导致了对低噪声电路的有趣设计考虑。

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Effects induced by gamma radiation on the noise in junction field-effect transistors belonging to monolithic processes

The effects of /spl gamma/-rays on the noise characteristics of junction field-effect transistors belonging to three monolithic technologies have been investigated. A substantially different behavior of the radiation-induced noise in N and P-channel JFETs was observed. This results in interesting design considerations for low-noise circuits.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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