SOI衬底埋藏氧化物中移动电荷的产生和限制

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858590

O. Musseau, S. Krawiec, P. Paillet, A. Courtot-Descharles, O. Gruber

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引用次数: 0

摘要

本文分析了SOI埋地氧化物氢退火产生和约束可移动质子的机理。在标准制备技术下，埋藏氧化物中产生固定正电荷和移动正电荷。一系列新的实验数据研究了固定费用与移动费用的比例。样品内电荷均匀性的分析揭示了氧化物中扩散的基本作用。实验数据和原子尺度模型强调了Si-SiO/sub - 2/界面的重要性。

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Generation and confinement of mobile charges in buried oxide of SOI substrates

We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. Under standard preparation techniques, both fixed and mobile positive charges are generated in the buried oxide. A series of new experimental data investigates the ratio of fixed to mobile charges. The analysis of charge homogeneity within the sample reveals the basic role of diffusion in the oxide. Experimental data and atomic scale modeling emphasize the importance of Si-SiO/sub 2/ interface.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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