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Single event effects and prompt dose hardness of a deep submicron commercial process 深亚微米商业工艺的单事件效应和提示剂量硬度
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045533
J. Benedetto
{"title":"Single event effects and prompt dose hardness of a deep submicron commercial process","authors":"J. Benedetto","doi":"10.1109/REDW.2002.1045533","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045533","url":null,"abstract":"A single event effects and prompt dose hardened 0.25 /spl mu/m CMOS process has been developed using the WaferTech commercial foundry. The hardness was achieved solely using design-hardening techniques, i.e. no process changes were added or removed from the commercial flow.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117205501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Single event testing of DC/DC converters for space flight 航天用DC/DC变换器单事件试验
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045538
K. Warren, D. Roth, J. Kinnison, R. Pappalardo
{"title":"Single event testing of DC/DC converters for space flight","authors":"K. Warren, D. Roth, J. Kinnison, R. Pappalardo","doi":"10.1109/REDW.2002.1045538","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045538","url":null,"abstract":"Hybrid DC/DC converters from two major manufacturers were tested for single event transient and catastrophic single event induced failures. The converters were evaluated under a range of loading conditions and input voltages.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128299052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Proton response of low-frequency noise in 0.20 /spl mu/m 90 GHz f/sub T/ UHV/CVD SiGe HBTs 0.20 /spl mu/m 90 GHz f/sub / UHV/CVD SiGe hts低频噪声的质子响应
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045542
Z. Jin, J. Cressler, G. Niu, P. Marshall, H.S. Kim, R. Reed, A. Joseph
{"title":"Proton response of low-frequency noise in 0.20 /spl mu/m 90 GHz f/sub T/ UHV/CVD SiGe HBTs","authors":"Z. Jin, J. Cressler, G. Niu, P. Marshall, H.S. Kim, R. Reed, A. Joseph","doi":"10.1109/REDW.2002.1045542","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045542","url":null,"abstract":"The influence of proton exposure on the low-frequency noise of 0.20 /spl mu/m UHV/CVD SiGe HBTs is presented for the first time. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on first generation SiGe technology.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121218141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEE and TID of emerging non-volatile memories 新兴非易失性存储器的SEE和TID
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045534
D. Nguyen, L. Scheick
{"title":"SEE and TID of emerging non-volatile memories","authors":"D. Nguyen, L. Scheick","doi":"10.1109/REDW.2002.1045534","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045534","url":null,"abstract":"We report on the SEE and TID (total ionizing dose) tests of higher density flash memories. Stand-by currents and functionality tests were used to characterize the response to radiation effects. Single event functional interrupt (SEFI) errors were observed indicating upsets from complex control circuitry.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124939891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Radiation effects data on commercially available optical fiber: database summary 商用光纤的辐射效应数据:数据库摘要
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045528
M. Ott
{"title":"Radiation effects data on commercially available optical fiber: database summary","authors":"M. Ott","doi":"10.1109/REDW.2002.1045528","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045528","url":null,"abstract":"Presented here are the results of a survey performed at NASA Goddard Space Flight Center on radiation data for commercially available optical fiber. The survey includes data from the past decade that can still be used for currently available parts. The objective of this work was to provide a current central location for relevant radiation data on optical fiber that could be useful for space flight projects. Only valid part numbers that are currently relevant to the manufacturers producing the optical fiber and parts that have been verified as changing number but not process, are included in this study. Presented are the currently available optical fiber types with valid part numbers and manufacturer, the relevant radiation data, and the corresponding data reference. Also included in this summary is the recent unreleased radiation data from experiments conducted at Goddard Space Flight Center on OFS (formerly Spectran) 62.5/125/250 micron optical fiber. This database will serve as a tool for engineers when selecting radiation tested optical fiber for future and current optical fiber systems for space flight applications.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124670369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
Piezoresistive micromechanical transducer operation in a pulsed neutron and gamma ray environment 压阻式微机械换能器在脉冲中子和伽马射线环境中工作
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045551
S. McCready, T. H. Harlow, A. Heger, K. Holbert
{"title":"Piezoresistive micromechanical transducer operation in a pulsed neutron and gamma ray environment","authors":"S. McCready, T. H. Harlow, A. Heger, K. Holbert","doi":"10.1109/REDW.2002.1045551","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045551","url":null,"abstract":"We completed the third in a series of experiments using commercially available, piezoresistive microelectromechanical system (MEMS) transducers to instrument articles exposed to the intense, pulsed neutron and gamma ray radiation environment of Sandia National Laboratories' Annular Core Research Reactor. Based on analyzing the survival of pressure transducers and accelerometers in the first two experiments, we identified candidate piezoresistive, MEMS transducers and then tested them by exposure to pulses, each with 10/sup 15/ neutrons/cm/sup 2/ and 10/sup 4/ Gy (1 Mrad) of gamma radiation. Simultaneous measurement of temperature indicates that the pressure transducers retain their calibrations and may provide a means of quickly identifying temperature-induced offset shifts of accelerometer calibrations. Comparison to other sensors that do not survive in this environment and implications for using these transducers to instrument test articles are also presented.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129178958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Total dose bias dependency and ELDRS effects in bipolar linear devices 双极线性器件的总剂量偏倚依赖性和ELDRS效应
IEEE Radiation Effects Data Workshop Pub Date : 2002-07-15 DOI: 10.1109/REDW.2002.1045543
C. Yui, S. McClure, B. Rax, J. Lehman, T. Minto, M. Wiedeman
{"title":"Total dose bias dependency and ELDRS effects in bipolar linear devices","authors":"C. Yui, S. McClure, B. Rax, J. Lehman, T. Minto, M. Wiedeman","doi":"10.1109/REDW.2002.1045543","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045543","url":null,"abstract":"Total dose tests of several bipolar linear devices show sensitivity to both dose rate and bias during exposure. All devices exhibited enhanced low dose rate sensitivity (ELDRS). An accelerated ELDRS test method for three different devices demonstrates results similar to tests at low dose rate. Behavior and critical parameters from these tests are compared and discussed.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117191644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Low dose failures of hardened DC-DC power converters 硬化DC-DC电源变换器的低剂量故障
IEEE Radiation Effects Data Workshop Pub Date : 2002-07-15 DOI: 10.1109/REDW.2002.1045539
J. Lehman, C. Yui, B. Rax, T. Miyahira, M. Wiedeman, P. Schrock, G. Swift, A. Johnston, S. Kayali
{"title":"Low dose failures of hardened DC-DC power converters","authors":"J. Lehman, C. Yui, B. Rax, T. Miyahira, M. Wiedeman, P. Schrock, G. Swift, A. Johnston, S. Kayali","doi":"10.1109/REDW.2002.1045539","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045539","url":null,"abstract":"Radiation tests of Interpoint DC-DC converters, guaranteed by the manufacturer to 100 krad(Si), showed catastrophic failures at total dose levels as low as 4 krad(Si). Special diagnostic tests showed that failures were caused by an internal CMOS MOSFET driver chip being used in an application that differed from earlier radiation tests of the component. This paper discusses radiation testing, failure modes, and the method used to overcome this problem weeks prior to launch of two space systems.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133101950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Current single event effects and radiation damage results for candidate spacecraft electronics 候选航天器电子器件的当前单事件效应和辐射损伤结果
IEEE Radiation Effects Data Workshop Pub Date : 1998-07-24 DOI: 10.1109/REDW.2002.1045537
M. O’Bryan, K. Label, Raymond L. Ladbury, C. Poivey, J. W. Howard, Robert A. Reed, S. Kniffin, S. Buchner, J. Bings, Jeffrey Titus, Steven D. Clark, Thomas L. Turflinger, C. Seidleck, Cheryl J. Marshall, P. Marshall, Hak S. Kim, D. Hawkins, M. Carts, J. Forney, Michael R. Jones, A. Sanders, T. Irwin, S. R. Cox, Z. Kahric, Christopher D. Palor, J. A. Sciarini
{"title":"Current single event effects and radiation damage results for candidate spacecraft electronics","authors":"M. O’Bryan, K. Label, Raymond L. Ladbury, C. Poivey, J. W. Howard, Robert A. Reed, S. Kniffin, S. Buchner, J. Bings, Jeffrey Titus, Steven D. Clark, Thomas L. Turflinger, C. Seidleck, Cheryl J. Marshall, P. Marshall, Hak S. Kim, D. Hawkins, M. Carts, J. Forney, Michael R. Jones, A. Sanders, T. Irwin, S. R. Cox, Z. Kahric, Christopher D. Palor, J. A. Sciarini","doi":"10.1109/REDW.2002.1045537","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045537","url":null,"abstract":"We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, proton-induced damage, and total ionizing dose. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and DC-DC converters, among others.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128420245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 50
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