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Heavy ion transient characterization of a hardened-by-design active pixel sensor array 一种设计强化有源像素传感器阵列的重离子瞬态特性
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045552
C. Marshall, K. Label, R. Reed, P. Marshall, W. Byers, C. Conger, J. Peden, E. Eid, M.R. Jones, S. Kniffin, G. Gee, J. Pickel
{"title":"Heavy ion transient characterization of a hardened-by-design active pixel sensor array","authors":"C. Marshall, K. Label, R. Reed, P. Marshall, W. Byers, C. Conger, J. Peden, E. Eid, M.R. Jones, S. Kniffin, G. Gee, J. Pickel","doi":"10.1109/REDW.2002.1045552","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045552","url":null,"abstract":"This paper presents heavy ion test data on the single event transient response of an active pixel sensor four quadrant test chip with different radiation tolerant designs in a commercial 0.35 /spl mu/m CMOS process. The physical design techniques of enclosed geometry and P-type guard rings are used to design the four N-type active photodiode pixels as described in a previous paper (EI-Sayed Eid et al, IEEE Trans. Nucl. Sci., Vol. 48, pp. 1796-1806, Dec. 2001). Transient measurements on the 256/spl times/256 pixel array as a function of Ar ion incidence angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a significant variability between individual ion strikes for some unit cell designs. No latch-up is observed up to an LET (linear energy transfer) of 106 MeV/mg/cm/sup 2/.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"320 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132226123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Solar flare proton environment for estimating downtime of spacecraft CCDs 估算航天器ccd停机时间的太阳耀斑质子环境
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045526
E. Mikkelson, W. Baba
{"title":"Solar flare proton environment for estimating downtime of spacecraft CCDs","authors":"E. Mikkelson, W. Baba","doi":"10.1109/REDW.2002.1045526","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045526","url":null,"abstract":"A solar flare proton environment is presented that includes both flux and duration. This environment can be used to estimate the maximum downtime of a charge-coupled device (CCD), resulting from proton-induced false images.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122791771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers 先进BiCMOS技术(ABT)缓冲器和收发器的单事件瞬态(SET)灵敏度
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045535
R. Koga, P. Yu, S. Crain, K. Crawford, K. Chao
{"title":"Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers","authors":"R. Koga, P. Yu, S. Crain, K. Crawford, K. Chao","doi":"10.1109/REDW.2002.1045535","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045535","url":null,"abstract":"Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126701052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Comparative analysis of low dose-rate, accelerated, and standard cobalt-60 radiation response data for a low-dropout voltage regulator and a voltage reference 低剂量率、加速和标准钴-60辐射响应数据的对比分析，用于低差电压调节器和电压基准
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045550
W. Abare, F. Brueggeman, R. Pease, J. Krieg, M. Simons
{"title":"Comparative analysis of low dose-rate, accelerated, and standard cobalt-60 radiation response data for a low-dropout voltage regulator and a voltage reference","authors":"W. Abare, F. Brueggeman, R. Pease, J. Krieg, M. Simons","doi":"10.1109/REDW.2002.1045550","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045550","url":null,"abstract":"This paper presents the results of cobalt-60 response measurements made on a low dropout voltage regulator and a shunt reference for three different radiation test conditions: low dose rate, accelerated (elevated temperature irradiation) and standard (50-300 rad(SiO/sub 2/)/s). The accelerated test is shown to correlate well with the low dose rate failure of the reference but not for the failure of the regulator.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123799515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Variations in SET pulse shapes in the LM124A and LM111 LM124A和LM111中SET脉冲形状的变化
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045536
M. Savage, T. Turflinger, J. Titus, H. F. Barsun, A. Sternberg, Y. Boulghassoul, L. Massengill
{"title":"Variations in SET pulse shapes in the LM124A and LM111","authors":"M. Savage, T. Turflinger, J. Titus, H. F. Barsun, A. Sternberg, Y. Boulghassoul, L. Massengill","doi":"10.1109/REDW.2002.1045536","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045536","url":null,"abstract":"We present a paper that shows remarkable variation in single-event transient (SET) pulse signal shape for the LM124 operational amplifier, and the LM111 voltage comparator. Both the data and the test methods used are presented.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120936819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
High LET radiation effects microscopy for ICs 集成电路的高LET辐射效应显微镜
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045548
G. Vizkelethy, B. Doyle, F. McDaniel, P. Rossi, P. Dodd
{"title":"High LET radiation effects microscopy for ICs","authors":"G. Vizkelethy, B. Doyle, F. McDaniel, P. Rossi, P. Dodd","doi":"10.1109/REDW.2002.1045548","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045548","url":null,"abstract":"Radiation effects microscopy (REM) has been used at Sandia National Laboratories (SNL) for several years to study radiation hard ICs. As ICs become more radiation hardened, ions with larger linear energy transfer (LET) are needed to study their response to radiation. This higher LET can be achieved by using high energy, heavy ions. To carry out REM on ICs, the ion beam has to be focused to a submicron spot, which is very problematic for these ions. A new high LET system was developed at SNL, which combines two entirely new concepts in accelerator physics and nuclear microscopy. A radio frequency quadrupole (RFQ) linac is used to boost the energy of ions accelerated by a conventional tandem Van de Graaff-pelletron to velocities of 1.9 MeV/amu. To circumvent the problem of focusing high-energy ions, we invented ion-electron emission microscopy (IEEM). Instead of focusing the ion beam and scanning it over the device under test (DUT), the positions of the ion hits are determined by projecting ion-induced secondary electrons at high magnification onto a single-electron position sensitive detector (PSD). Then, the two position signals (x and y) are recorded in coincidence with each REM event. Details of the RFQ booster and the IEEM system are given with initial results on Sandia manufactured radiation hardened ICs.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128723701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
SEE in-flight data for two static 32KB memories on high earth orbit 在高地球轨道上查看两个静态32KB存储器的飞行数据
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045524
S. Duzellier, S. Bourdarie, R. Velazco, B. Nicolescu, R. Ecoffet
{"title":"SEE in-flight data for two static 32KB memories on high earth orbit","authors":"S. Duzellier, S. Bourdarie, R. Velazco, B. Nicolescu, R. Ecoffet","doi":"10.1109/REDW.2002.1045524","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045524","url":null,"abstract":"SEE (single event effect) in-flight measurements are presented for two 32 kB SRAMs in the MPTB orbit. The major contribution to the event rates comes from the proton radiation belts. During solar events, stuck bits occurred and the SEU rate is correlated to the high energy proton flux but the amplitude is not conserved.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121508499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Radiation effects predicted, observed, and compared for spacecraft systems 航天器系统辐射效应的预测、观测和比较
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045525
B. Pritchard, G. Swift, A. Johnston
{"title":"Radiation effects predicted, observed, and compared for spacecraft systems","authors":"B. Pritchard, G. Swift, A. Johnston","doi":"10.1109/REDW.2002.1045525","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045525","url":null,"abstract":"This paper documents radiation effects observed in selected spacecraft at the system and subsystem levels, and where possible, relates them to predicted radiation effects in parts. Comparisons are also made as functions of design paradigm, assurance philosophy, and the vintage and complexity of the parts and the system.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124540801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Radiation effects testing facilities in PSI during implementation of the Proscan project 在实施Proscan计划期间，PSI内的辐射效应测试设施
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045547
W. Hajdas, F. Burri, C. Eggel, R. Harboe-Sørensen, R. de Marino
{"title":"Radiation effects testing facilities in PSI during implementation of the Proscan project","authors":"W. Hajdas, F. Burri, C. Eggel, R. Harboe-Sørensen, R. de Marino","doi":"10.1109/REDW.2002.1045547","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045547","url":null,"abstract":"The new biomedical project Proscan requires reconstruction of the whole Nucleon Area. During this period, the proton irradiation facility for components testing will share the beam with the Proton Therapy Facility part of the area. Another low energy facility, suited for displacement effect studies, was reinstalled in the dedicated area near the eye cancer exposure site OPTIS. Both facilities are designed in a similar, flexible and user-friendly manner.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114487992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Use of COTS components for dose rate measurement from 1 krad(SiO/sub 2/)/h to 200 krad(SiO/sub 2/)/h 使用COTS组件进行1 krad(SiO/sub 2/)/h至200 krad(SiO/sub 2/)/h的剂量率测量
IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045546
P. Chambaud, C. Brisset, G. Beuzelin
{"title":"Use of COTS components for dose rate measurement from 1 krad(SiO/sub 2/)/h to 200 krad(SiO/sub 2/)/h","authors":"P. Chambaud, C. Brisset, G. Beuzelin","doi":"10.1109/REDW.2002.1045546","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045546","url":null,"abstract":"This document describes an apparatus hardened for use in extremely high gamma radiation dose rate measurement. The basic assembly comprises a silicon detector associated with a COTS amplifier. It is supplemented by a drift compensation system.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"12 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120986293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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