Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI:10.1109/REDW.2002.1045535

R. Koga, P. Yu, S. Crain, K. Crawford, K. Chao

引用次数: 5

Abstract

Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.

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先进BiCMOS技术(ABT)缓冲器和收发器的单事件瞬态(SET)灵敏度

介绍了各种先进BiCMOS技术(ABT)缓冲器和收发器的重离子诱导单事件瞬态。对于我们的测试样品，瞬态灵敏度有很大的变化。一些测试样品对单事件锁存很敏感。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Radiation Effects Data Workshop

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