IEEE Radiation Effects Data Workshop最新文献

Single event upset characterization of the Pentium/sup /spl reg// 4, Pentium/sup /spl reg// III and low power Pentium/sup /spl reg// MMX microprocessors using proton irradiation Pentium/sup /spl reg// 4、Pentium/sup /spl reg// III和低功耗Pentium/sup /spl reg// MMX微处理器的单事件扰动特性

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045532

D. Hiemstra, S. Yu, M. Pop

引用次数: 5

Ion beam testing of ALTERA APEX FPGAs ALTERA APEX fpga的离子束测试

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045531

M. Ceschia, M. Bellato, A. Paccagnella, A. Kaminski

{"title":"Ion beam testing of ALTERA APEX FPGAs","authors":"M. Ceschia, M. Bellato, A. Paccagnella, A. Kaminski","doi":"10.1109/REDW.2002.1045531","DOIUrl":"https://doi.org/10.1109/REDW.2002.1045531","url":null,"abstract":"In this work we have studied the effects of heavy ion beam irradiation on a field programmable gate array (FPGA). We have essentially investigated the single event effects (SEE) induced by ions having linear energy transfer (LET) values between LET=1.6 MeV/spl middot/cm/sup 2//mg and LET=78 MeV/spl middot/cm/sup 2//mg. Our tests were performed on a device of the APEX family manufactured by Altera Corporation, featuring a SRAM-based configuration memory. The test methodology was based on the implementation of four shift registers (SRs), two of them using the triple-modular-redundant (TMR) technique. The functionality of this circuit was continuously checked during irradiation and every detected error was logged and time-stamped by a control system. Very few single event upsets have been detected in the SRs. On the contrary, we have recorded a large number of single event functional interrupts (SEFIs). SEFIs were induced by SEUs in the SRAM configuration memory. We observed a constant increase of the supply current during irradiation but this effect was not due to single event latch-ups, but to progressive SEU-induced driver contentions or cumulative micro latch-ups. The configuration memory cross section has been calculated from SEFI cross section.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114633794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 49

Updated responses of devices from the FSG and FSP radiation-hardened power MOSFET families to 1-MeV equivalent neutrons FSG和FSP抗辐射功率MOSFET系列器件对1 mev等效中子的最新响应

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045544

J. E. Gillberg, J. Titus, N. Hubbard, D. I. Burton, C. Wheatley

引用次数: 1

SCK/spl middot/CEN gamma irradiation facilities for radiation tolerance assessment 用于辐射耐受性评估的SCK/spl middot/CEN辐照设施

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045549

A.F. Fernandez, H. Ooms, B. Brichard, M. Coeck, S. Coenen, F. Berghmans, M. Decréton

引用次数: 39

Proton and electron radiation effects on dry lithium metal polymer batteries 质子和电子辐射对干式锂金属聚合物电池的影响

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045541

Y. Choquette, D. Lessard-Déziel

引用次数: 3

Radiation performance of the L4913 voltage regulator L4913稳压器的辐射性能

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045540

N. Boetti, P. Jarron, B. Kisielewski, F. Faccio

引用次数: 8

Ionizing radiation effects in EPF10K50E and XC2S150 programmable logic devices EPF10K50E和XC2S150可编程逻辑器件的电离辐射效应

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045530

D. Gingrich, N. Buchanan, L. Chen, S. Liu

引用次数: 5

Nuclear dose rate, total dose and neutron radiation testing of COTS devices COTS装置的核剂量率、总剂量和中子辐射试验

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045545

S.G. Mulford, D. Brown, A. L. McMaster

引用次数: 3

A radiation tolerant video camera for high total dose environments 一种适用于高总剂量环境的耐辐射摄像机

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045527

G. Hopkinson, M. Skipper, B. Taylor

引用次数: 6

Proton single event effects (SEE) testing of the Myrinet crossbar switch and network interface card 质子单事件效应(SEE)测试的Myrinet crossbar交换机和网络接口卡

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI: 10.1109/REDW.2002.1045529

S. M. I. James W. Howard Jr., M. I. Kenneth A. LaBel, Ieee Martin A. Carts Member, Ronald Stattel, Charles E. Rogers, Timothy L. Irwin

引用次数: 3