Ionizing radiation effects in EPF10K50E and XC2S150 programmable logic devices

Abstract

We have measured the effects of total ionizing dose in Altera FLEX 10K50E embedded programmable logic devices and Xilinx Spartan-II 150 field program gate arrays. The devices were irradiated with X-rays at a dose rate of about 12 cGy(SiO/sub 2/)/s. An average total dose of 830 Gy(SiO/sub 2/) was absorbed by the FLEX 10KE and 330 Gy(SiO/sub 2/) by the Spartan-II before the power supply current increased.