EPF10K50E和XC2S150可编程逻辑器件的电离辐射效应

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI:10.1109/REDW.2002.1045530

D. Gingrich, N. Buchanan, L. Chen, S. Liu

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引用次数: 5

摘要

我们测量了总电离剂量对Altera FLEX 10K50E嵌入式可编程逻辑器件和Xilinx Spartan-II 150现场程序门阵列的影响。这些装置用x射线照射，剂量率约为12 cGy(SiO/sub 2/)/s。在电源电流增加之前，FLEX 10KE和Spartan-II的平均总剂量分别为830 Gy(SiO/sub 2/)和330 Gy(SiO/sub 2/)。

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Ionizing radiation effects in EPF10K50E and XC2S150 programmable logic devices

We have measured the effects of total ionizing dose in Altera FLEX 10K50E embedded programmable logic devices and Xilinx Spartan-II 150 field program gate arrays. The devices were irradiated with X-rays at a dose rate of about 12 cGy(SiO/sub 2/)/s. An average total dose of 830 Gy(SiO/sub 2/) was absorbed by the FLEX 10KE and 330 Gy(SiO/sub 2/) by the Spartan-II before the power supply current increased.

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IEEE Radiation Effects Data Workshop

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