COTS装置的核剂量率、总剂量和中子辐射试验

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI:10.1109/REDW.2002.1045545

S.G. Mulford, D. Brown, A. L. McMaster

{"title":"COTS装置的核剂量率、总剂量和中子辐射试验","authors":"S.G. Mulford, D. Brown, A. L. McMaster","doi":"10.1109/REDW.2002.1045545","DOIUrl":null,"url":null,"abstract":"A compendium of radiation data for commercial off-the-shelf (COTS) devices is presented for the narrow pulse gamma dose rate, total dose gamma and neutron environments. The devices range from power MOSFETs to microprocessors and controllers. Most of the testing was performed to determine functional survivability.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"278 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Nuclear dose rate, total dose and neutron radiation testing of COTS devices\",\"authors\":\"S.G. Mulford, D. Brown, A. L. McMaster\",\"doi\":\"10.1109/REDW.2002.1045545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compendium of radiation data for commercial off-the-shelf (COTS) devices is presented for the narrow pulse gamma dose rate, total dose gamma and neutron environments. The devices range from power MOSFETs to microprocessors and controllers. Most of the testing was performed to determine functional survivability.\",\"PeriodicalId\":135340,\"journal\":{\"name\":\"IEEE Radiation Effects Data Workshop\",\"volume\":\"278 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Radiation Effects Data Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2002.1045545\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2002.1045545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

介绍了窄脉冲伽玛剂量率、总剂量伽玛和中子环境下商用现货(COTS)设备的辐射数据简编。器件范围从功率mosfet到微处理器和控制器。大多数测试是为了确定功能性存活能力。

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Nuclear dose rate, total dose and neutron radiation testing of COTS devices

A compendium of radiation data for commercial off-the-shelf (COTS) devices is presented for the narrow pulse gamma dose rate, total dose gamma and neutron environments. The devices range from power MOSFETs to microprocessors and controllers. Most of the testing was performed to determine functional survivability.

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IEEE Radiation Effects Data Workshop

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