FSG和FSP抗辐射功率MOSFET系列器件对1 mev等效中子的最新响应

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI:10.1109/REDW.2002.1045544

J. E. Gillberg, J. Titus, N. Hubbard, D. I. Burton, C. Wheatley

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引用次数: 1

摘要

这篇论文更新了我们2001年的研讨会论文，并提供了六种器件类型的中子测试结果，分别代表了仙子半导体公司生产的Star Power Gold, FSG和Star Power, FSP，辐射硬化功率MOSFET系列。FSG和FSP系列均采用条纹单元拓扑结构，器件额定漏极击穿电压为30伏至250伏。

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Updated responses of devices from the FSG and FSP radiation-hardened power MOSFET families to 1-MeV equivalent neutrons

This paper updates our 2001 workshop paper and provides neutron test results of six device types representing the Star Power Gold, FSG, and the Star Power, FSP, radiation-hardened power MOSFET families manufactured by Fairchild Semiconductor. Both the FSG and FSP families employ a stripe-cell topology with devices having rated drain breakdown voltages from 30 volts to 250 volts.

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IEEE Radiation Effects Data Workshop

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