Updated responses of devices from the FSG and FSP radiation-hardened power MOSFET families to 1-MeV equivalent neutrons

J. E. Gillberg, J. Titus, N. Hubbard, D. I. Burton, C. Wheatley
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引用次数: 1

Abstract

This paper updates our 2001 workshop paper and provides neutron test results of six device types representing the Star Power Gold, FSG, and the Star Power, FSP, radiation-hardened power MOSFET families manufactured by Fairchild Semiconductor. Both the FSG and FSP families employ a stripe-cell topology with devices having rated drain breakdown voltages from 30 volts to 250 volts.
FSG和FSP抗辐射功率MOSFET系列器件对1 mev等效中子的最新响应
这篇论文更新了我们2001年的研讨会论文,并提供了六种器件类型的中子测试结果,分别代表了仙子半导体公司生产的Star Power Gold, FSG和Star Power, FSP,辐射硬化功率MOSFET系列。FSG和FSP系列均采用条纹单元拓扑结构,器件额定漏极击穿电压为30伏至250伏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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