先进BiCMOS技术(ABT)缓冲器和收发器的单事件瞬态(SET)灵敏度

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI:10.1109/REDW.2002.1045535

R. Koga, P. Yu, S. Crain, K. Crawford, K. Chao

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引用次数: 5

摘要

介绍了各种先进BiCMOS技术(ABT)缓冲器和收发器的重离子诱导单事件瞬态。对于我们的测试样品，瞬态灵敏度有很大的变化。一些测试样品对单事件锁存很敏感。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers

Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.

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IEEE Radiation Effects Data Workshop

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