SEE and TID of emerging non-volatile memories

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI:10.1109/REDW.2002.1045534

D. Nguyen, L. Scheick

引用次数: 21

Abstract

We report on the SEE and TID (total ionizing dose) tests of higher density flash memories. Stand-by currents and functionality tests were used to characterize the response to radiation effects. Single event functional interrupt (SEFI) errors were observed indicating upsets from complex control circuitry.

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新兴非易失性存储器的SEE和TID

我们报道了高密度闪存的SEE和TID(总电离剂量)测试。待机电流和功能测试用来表征对辐射效应的反应。单事件功能中断(SEFI)错误被观察到表明来自复杂控制电路的异常。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE Radiation Effects Data Workshop

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