候选航天器电子器件的当前单事件效应和辐射损伤结果

IEEE Radiation Effects Data Workshop Pub Date : 1998-07-24 DOI:10.1109/REDW.2002.1045537

M. O’Bryan, K. Label, Raymond L. Ladbury, C. Poivey, J. W. Howard, Robert A. Reed, S. Kniffin, S. Buchner, J. Bings, Jeffrey Titus, Steven D. Clark, Thomas L. Turflinger, C. Seidleck, Cheryl J. Marshall, P. Marshall, Hak S. Kim, D. Hawkins, M. Carts, J. Forney, Michael R. Jones, A. Sanders, T. Irwin, S. R. Cox, Z. Kahric, Christopher D. Palor, J. A. Sciarini

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引用次数: 50

摘要

我们提出了各种候选航天器电子设备对质子和重离子诱导的单事件效应、质子诱导损伤和总电离剂量的脆弱性的数据。测试的器件包括光电子、数字、模拟、线性双极、混合器件、模数转换器(adc)、数模转换器(dac)和DC-DC转换器等。

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Current single event effects and radiation damage results for candidate spacecraft electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, proton-induced damage, and total ionizing dose. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and DC-DC converters, among others.

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IEEE Radiation Effects Data Workshop

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