0.20 /spl mu/m 90 GHz f/sub / UHV/CVD SiGe hts低频噪声的质子响应

IEEE Radiation Effects Data Workshop Pub Date : 2002-12-10 DOI:10.1109/REDW.2002.1045542

Z. Jin, J. Cressler, G. Niu, P. Marshall, H.S. Kim, R. Reed, A. Joseph

{"title":"0.20 /spl mu/m 90 GHz f/sub / UHV/CVD SiGe hts低频噪声的质子响应","authors":"Z. Jin, J. Cressler, G. Niu, P. Marshall, H.S. Kim, R. Reed, A. Joseph","doi":"10.1109/REDW.2002.1045542","DOIUrl":null,"url":null,"abstract":"The influence of proton exposure on the low-frequency noise of 0.20 /spl mu/m UHV/CVD SiGe HBTs is presented for the first time. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on first generation SiGe technology.","PeriodicalId":135340,"journal":{"name":"IEEE Radiation Effects Data Workshop","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Proton response of low-frequency noise in 0.20 /spl mu/m 90 GHz f/sub T/ UHV/CVD SiGe HBTs\",\"authors\":\"Z. Jin, J. Cressler, G. Niu, P. Marshall, H.S. Kim, R. Reed, A. Joseph\",\"doi\":\"10.1109/REDW.2002.1045542\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of proton exposure on the low-frequency noise of 0.20 /spl mu/m UHV/CVD SiGe HBTs is presented for the first time. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on first generation SiGe technology.\",\"PeriodicalId\":135340,\"journal\":{\"name\":\"IEEE Radiation Effects Data Workshop\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Radiation Effects Data Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2002.1045542\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2002.1045542","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

首次研究了质子暴露对0.20 /spl mu/m UHV/CVD SiGe HBTs低频噪声的影响。辐照后的噪声衰减与晶体管的几何形状密切相关。我们使用之前的噪声理论来理解这种行为，并将这些关于第三代SiGe技术的新结果与我们之前关于第一代SiGe技术的结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Proton response of low-frequency noise in 0.20 /spl mu/m 90 GHz f/sub T/ UHV/CVD SiGe HBTs

The influence of proton exposure on the low-frequency noise of 0.20 /spl mu/m UHV/CVD SiGe HBTs is presented for the first time. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on first generation SiGe technology.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Radiation Effects Data Workshop

自引率

0.00%

发文量