Low dose failures of hardened DC-DC power converters

IEEE Radiation Effects Data Workshop Pub Date : 2002-07-15 DOI:10.1109/REDW.2002.1045539

J. Lehman, C. Yui, B. Rax, T. Miyahira, M. Wiedeman, P. Schrock, G. Swift, A. Johnston, S. Kayali

引用次数: 6

Abstract

Radiation tests of Interpoint DC-DC converters, guaranteed by the manufacturer to 100 krad(Si), showed catastrophic failures at total dose levels as low as 4 krad(Si). Special diagnostic tests showed that failures were caused by an internal CMOS MOSFET driver chip being used in an application that differed from earlier radiation tests of the component. This paper discusses radiation testing, failure modes, and the method used to overcome this problem weeks prior to launch of two space systems.

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硬化DC-DC电源变换器的低剂量故障

Interpoint DC-DC转换器的辐射测试显示，在总剂量低至4 krad(Si)时，发生了灾难性的故障，制造商保证该转换器的辐射剂量不超过100 krad(Si)。特殊诊断测试表明，故障是由于应用中使用的内部CMOS MOSFET驱动芯片与早期组件的辐射测试不同而引起的。本文讨论了辐射测试、失效模式，以及在两个空间系统发射前几周克服这一问题的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Radiation Effects Data Workshop

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