{"title":"Alternative dicing die attach film method for high volume small dice application","authors":"Kf Lim","doi":"10.1109/IEMT.2010.5746668","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746668","url":null,"abstract":"This paper introduces an unconventional sawing approach for sawing die attach film (DAF) to successfully re-solve severe loose dies and severe dies non-pick issues at die attach (DA) process particularly small dice application. Conventional forward step cut during DAF sawing causes the DAF layer to penetrate and anchor into the base/dicing film. A diverse wafer sawing approach and study on DAF was carried out by evaluating different sawing method and sawing parameters. The results show that for small dice DAF sawing, a modified step reverse cut mode is crucial to ensure good and high die attach pick up yield. An innovative reverse step cut sawing method is proposed for sawing small dice application with DAF.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121975439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High temperature storage performance for Au Sn diffusion soldering on Cu leadframe substrate","authors":"Z. Abdullah, Mohamed Abdul Rahman","doi":"10.1109/IEMT.2010.5746718","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746718","url":null,"abstract":"It has been reported that the microstructure of the Au20Sn solder was strongly affected by the dissolution of Cu in the reflow process1. From this findings a study had been conducted but this time using a four layer stacked back side metallization using Au25Sn on Cu leadframe substrate on the effect of the inter metallic compound after long stoppages until 10 mins at die bonding tunnel with complete supply of 85%N215%H2 extended up to 2000hrs of High Temperature Storage at 175 °C. The layer stacked was using ametal stack of Al400nm/Ti400nm/andNiV75nm/75Au25Sn 1200nm, the samples were then die bonded at 360° C using TO 263 LPL selective NiNiP leadframe","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125949617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Eid, T. Lacrevaz, C. Bermond, S. Capraro, J. Roullard, B. Fléchet, L. Cadix, A. Farcy, P. Ancey, F. Calmon, O. Valorge, P. Leduc
{"title":"Frequency and time domain characterization of substrate coupling effects in 3D integration stack","authors":"E. Eid, T. Lacrevaz, C. Bermond, S. Capraro, J. Roullard, B. Fléchet, L. Cadix, A. Farcy, P. Ancey, F. Calmon, O. Valorge, P. Leduc","doi":"10.1109/IEMT.2010.5746730","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746730","url":null,"abstract":"In new circuits performed with 3D integration technology, electromagnetic interference through stacked silicon substrates may occur due to signals propagated in Through Silicon Vias (TSV) and along Redistribution Layers (RDL) [1]. So, to optimize electrical performances of these new 3D digital or RF circuits, substrate coupling effects need to be characterized, modeled and quantified in a large frequency bandwidth.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127091990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FMEA/PFMEA : What they never teach you in formal school","authors":"S. Shridhar","doi":"10.1109/IEMT.2010.5746755","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746755","url":null,"abstract":"FMEA or Failure Mode Effects Analysis is an analytical procedure to identify and minimize risk factors in product and process designs. Whilst the FMEA methodology has been in use since the 1940's, the effectiveness of the procedure became really widespread after its adoption by the automotive industry in the late 1970's. The FMEA procedure is a preventative tool and hence must be performed prior to finalization of the design of the product and the manufacturing or service processes. Quality Assurance Standards such as ISO 9001 and TS 16949 emphasize the need for minimizing and /or eliminating risks in the design of products and processes, which has led to many organisations adopting the FMEA methodology as part of their D & D processes. This widespread use is encouraging, but equally important is the correct use of the procedure as otherwise the resultant documentation will not provide the required focus in the detection of risks. The use of robustness tools such as the Boundary diagram, Parameter diagram and the Interface matrix is essential in order to bring in the required discipline in the detection of risk factors. Experience shows that engineers often focus only on those aspects that they control directly and miss the causal factors, particularly the interfaces in the system, misuse of the product by the customer - either intentional or unintentional, and natural degradation, all of which cause the risks. In this article, the author explains how the robustness tools can be usefully applied in both the design and manufacturing design of products such as semiconductor packaging.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130720573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The development of new SMT printing techniques for mixed technology (heterogeneous) assembly","authors":"M. Whitmore, C. Ashmore","doi":"10.1109/IEMT.2010.5746678","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746678","url":null,"abstract":"As electronics assemblies continue to shrink in form factor with decreasing component sizes, and an ever increasing mix and density of components, the Surface Mount assembly process is becoming increasingly challenged.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130555427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Hyung Kim, Dong-Nam Kim, Hoon Jang, Young-Chul Jo, Nam-Yong Kim, Seung-Geun Kang, Byung-Ju Lee, Dal-Soo Kim
{"title":"A consideration on the Electrical Overstress(EOS) failure mechanism in the interconnection system of liquid crystal display(LCD) panel","authors":"Jae-Hyung Kim, Dong-Nam Kim, Hoon Jang, Young-Chul Jo, Nam-Yong Kim, Seung-Geun Kang, Byung-Ju Lee, Dal-Soo Kim","doi":"10.1109/IEMT.2010.5746676","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746676","url":null,"abstract":"The IC industry has been paid a large amount of quality cost for Electrical Overstress(EOS) damages. This paper described the failure analysis procedure to find EOS source and the experimental methodology to verify the failure mechanism in the subsystems of the LCD panel interconnected with printed circuit boards.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131902511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Miniaturization innovation evolution of electronics packaging - What's coming next …?","authors":"A. Wagiman","doi":"10.1109/IEMT.2010.5746749","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746749","url":null,"abstract":"Intel's Moore's Law focuses on shrinking the transistors in the silicon to be able to pack more and more transistors for a given area. In general, Intel has been able to double the transistor count every 18–24 months and has been doing so while keeping the silicon size at about the same size or even smaller. The key implication to that trend has been the I/O density that needs to be routed through the packaging is also increasing (ie. More I/O count per area).","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131927809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"3D Packaging Technology: Enabling the next wave of applications","authors":"M. A. Bolanos","doi":"10.1109/IEMT.2010.5746735","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746735","url":null,"abstract":"This paper describes 3D Packaging Technology trend and highlights its contribution to the development of the next wave of electronic products. The paper's introduction discusses general Packaging Technology trends in the semiconductor industry and the major Packaging Functionality changes that have been experienced during the last few decades. It also covers some of the future functions that will be performed by packaging technology such as system in packages to enable autonomous smart electronics, with heterogeneous technology such as signal processing, sensors, power management, energy harvesting modules and nano storage devices. It describes the evolution of 3D packaging technology in three different waves or phases. It also presents some of the Megatrends enabled by 3D Packaging, Miniaturization and Integration, as well as the main challenges the industry is experiencing with the development and implementation in volume production of the third wave, Through Silicon Vias (TSV). The final section of this paper discusses TSV drivers and benefits, the expected Value Added coming from TSV vs. Required Cost to Develop and Implement, and whether TSV is going to be used in mostly “Niche High Value Added” applications or adopted as a Mainstream solution for many applications.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131179014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Filler size influence on moldabilty of high density QFN package","authors":"C. Yi, K. Ong, Q. Pin, Lee Swee Kah","doi":"10.1109/IEMT.2010.5746696","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746696","url":null,"abstract":"In today semiconductor's market, in order to fulfill the requirements of the growing mobile GPS market for higher sensitivity, higher immunity against interference of cellular signals and low power consumption, the new QFN package named TSNP 11-2 had being developed as the world's smallest GPS Receive Front End module. The package size measures just 2.5mm × 2.5mm × 0.7mm in size with one Low Noise Amplifier (LNA), filters chip and a diode in this tiny package. Nevertheless, it comes with challenge on wire loop height due to stack die, narrow half etch design due to thin lead frame and thin package thickness (wire to top package cavity). Different filler size couple with different spiral flow had been evaluated to understand the influence on moldability. From the study, filler size plays an important or dominant role in resolving the moldability issue by total eliminating of wire sweep. Thus help in improving the production yield by 8%.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125639207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Resolving thermal resistance problem of Analog device in conjunction with the ONxx Shrink Die Technology","authors":"Y. G. Yabut, A. Reyes","doi":"10.1109/IEMT.2010.5746704","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746704","url":null,"abstract":"This paper will discuss the in-depth details and experiments done to address the thermal resistance of Analog device thus paving the release and qualification of ONxx Shrink Die Technology hitting corporate drive of sure cost saving projects and bringing ON Semiconductor Philippines Incorporated to desire level of competitiveness. A closer look on the variables that contribute to these phenomena will single out on the materials that had direct impact on the problems. By introducing new bill of material from the current practice, thermal resistance problem were address enhancing convection process of integrated circuits built moreover this convective resistance parameters to include temperature drop across layers, thermal conductivity and fluidity of the epoxy, validate the desired action needed to resolve this qualification.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"320 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115280974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}