铜引线框架基板上Au - Sn扩散焊的高温储存性能

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI:10.1109/IEMT.2010.5746718

Z. Abdullah, Mohamed Abdul Rahman

{"title":"铜引线框架基板上Au - Sn扩散焊的高温储存性能","authors":"Z. Abdullah, Mohamed Abdul Rahman","doi":"10.1109/IEMT.2010.5746718","DOIUrl":null,"url":null,"abstract":"It has been reported that the microstructure of the Au20Sn solder was strongly affected by the dissolution of Cu in the reflow process1. From this findings a study had been conducted but this time using a four layer stacked back side metallization using Au25Sn on Cu leadframe substrate on the effect of the inter metallic compound after long stoppages until 10 mins at die bonding tunnel with complete supply of 85%N215%H2 extended up to 2000hrs of High Temperature Storage at 175 °C. The layer stacked was using ametal stack of Al400nm/Ti400nm/andNiV75nm/75Au25Sn 1200nm, the samples were then die bonded at 360° C using TO 263 LPL selective NiNiP leadframe","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High temperature storage performance for Au Sn diffusion soldering on Cu leadframe substrate\",\"authors\":\"Z. Abdullah, Mohamed Abdul Rahman\",\"doi\":\"10.1109/IEMT.2010.5746718\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It has been reported that the microstructure of the Au20Sn solder was strongly affected by the dissolution of Cu in the reflow process1. From this findings a study had been conducted but this time using a four layer stacked back side metallization using Au25Sn on Cu leadframe substrate on the effect of the inter metallic compound after long stoppages until 10 mins at die bonding tunnel with complete supply of 85%N215%H2 extended up to 2000hrs of High Temperature Storage at 175 °C. The layer stacked was using ametal stack of Al400nm/Ti400nm/andNiV75nm/75Au25Sn 1200nm, the samples were then die bonded at 360° C using TO 263 LPL selective NiNiP leadframe\",\"PeriodicalId\":133127,\"journal\":{\"name\":\"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.2010.5746718\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2010.5746718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

有报道称，回流过程中Cu的溶解对Au20Sn焊料的显微组织有很大影响。根据这一发现，我们进行了一项研究，但这次是在Cu引线框架衬底上使用Au25Sn进行四层堆叠背面金属化，研究长时间停机后金属间化合物的影响，直到在模具键合隧道中10分钟，完全供应85%N215%H2，在175℃下延长至2000小时的高温储存。层叠层采用Al400nm/Ti400nm/和niv75nm /75Au25Sn 1200nm的金属层，然后使用TO 263 LPL选择性NiNiP引线架在360°C下进行晶合

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High temperature storage performance for Au Sn diffusion soldering on Cu leadframe substrate

It has been reported that the microstructure of the Au20Sn solder was strongly affected by the dissolution of Cu in the reflow process1. From this findings a study had been conducted but this time using a four layer stacked back side metallization using Au25Sn on Cu leadframe substrate on the effect of the inter metallic compound after long stoppages until 10 mins at die bonding tunnel with complete supply of 85%N215%H2 extended up to 2000hrs of High Temperature Storage at 175 °C. The layer stacked was using ametal stack of Al400nm/Ti400nm/andNiV75nm/75Au25Sn 1200nm, the samples were then die bonded at 360° C using TO 263 LPL selective NiNiP leadframe

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)

自引率

0.00%

发文量