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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)最新文献

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Absorption of intense terahertz radiation in InAs/AlSb heterojunction InAs/AlSb异质结对强太赫兹辐射的吸收
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237292
J. Cao, X. Lei
{"title":"Absorption of intense terahertz radiation in InAs/AlSb heterojunction","authors":"J. Cao, X. Lei","doi":"10.1109/COMMAD.2002.1237292","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237292","url":null,"abstract":"We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121236342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and electrical properties of InN grown by radio-frequency sputtering 射频溅射生长的InN的光学和电学性质
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237198
M. Wintrebert-Fouquet, K. Butcher, Motlan
{"title":"Optical and electrical properties of InN grown by radio-frequency sputtering","authors":"M. Wintrebert-Fouquet, K. Butcher, Motlan","doi":"10.1109/COMMAD.2002.1237198","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237198","url":null,"abstract":"InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased dramatically, however Australia remains a pioneering research force in this area. In this paper, we present our latest results on the optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of an In target with pure nitrogen gas. A new aspect of target conditioning is identified as an important growth parameter. A series of samples were grown with different thickness under optimized growth conditions. Films were characterised by X-ray diffraction, atomic force microscopy and Hall measurements. Optical measurements show that films have band gap values close to 2 eV. A comparative study of the optical and electrical properties is reported after removing 100 to 200 nm of the film surface by reactive ion etching.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125155702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots in /sub 0.5/Ga/sub 0.5/As/GaAs量子点中相互扩散的抑制
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237300
L. Fu, P. Lever, H. Tan, C. Jagadish, P. Reece, M. Gal
{"title":"Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots","authors":"L. Fu, P. Lever, H. Tan, C. Jagadish, P. Reece, M. Gal","doi":"10.1109/COMMAD.2002.1237300","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237300","url":null,"abstract":"In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO/sub 2/) film were deposited onto a In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO/sub 2 /film, however the TiO/sub 2/ film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO/sub 2/.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131269676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolution of InGaAs/InP quantum well intermixing as a function of cap layer InGaAs/InP量子阱混合随帽层变化的演化
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237297
C. Carmody, H. Tan, C. Jagadish
{"title":"Evolution of InGaAs/InP quantum well intermixing as a function of cap layer","authors":"C. Carmody, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2002.1237297","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237297","url":null,"abstract":"InP- and InGaAs- capped single In/sub 0.53/Ga/sub 0.47/As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200 /spl deg/C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"1088 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132673768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cat-CVD as a new fabrication technology of semiconductor devices Cat-CVD是一种新型的半导体器件制造技术
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237256
H. Matsumura, A. Izumi, A. Masuda
{"title":"Cat-CVD as a new fabrication technology of semiconductor devices","authors":"H. Matsumura, A. Izumi, A. Masuda","doi":"10.1109/COMMAD.2002.1237256","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237256","url":null,"abstract":"Cat-CVD, often called hot-wire CVD, is a new method to obtain device quality thin films at low substrate temperatures. In the method, gas molecules are decomposed by catalytic cracking reactions on heated catalyzer placed near substrates, instead of plasma decomposition in the conventional plasma enhanced CVD (PECVD). This paper is to review this Cat-CVD from fundamental mechanisms to device application. The features of Cat-CVD are demonstrated with comparison of PECVD.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133199583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electric conductimetric sensor with a thin-layer structure for moisture analysis 具有薄层结构的导电传感器，用于水分分析
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237231
K. Mitsubayashi, Y. Miyoshi, T. Takeuchi, I. Karube
{"title":"Electric conductimetric sensor with a thin-layer structure for moisture analysis","authors":"K. Mitsubayashi, Y. Miyoshi, T. Takeuchi, I. Karube","doi":"10.1109/COMMAD.2002.1237231","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237231","url":null,"abstract":"An electric conductimetric sensor (thickness: 80 /spl mu/m) constructed in a sandwich configuration with a hydrophilic poly-tetrafluoroethylene membrane placed between two gold deposited layers was evaluated for use as a moisture sensor. The humidity level was measured by electrical conductivity of the device using the Multi-frequency LCR-meter at frequencies ranging from 100 Hz to 100 k Hz, the device was calibrated at 100 Hz against the moisture air over the range of 30-85 % RH, which includes normal humidity level in the atmosphere and physiologic air such as breath and sweating. The response sensitivity of the conductimetric device was extremely high (i.e. less than 1 sec. for conductivity shift between humid air of 80 % RH and dried air of -60 /spl deg/C dew point) even for recovery to dried air. The sensor performance was reproducible over multiple measurements, showing the highly reproducibility with a coefficient of variation of 1.77 % (n = 5).","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131866579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of radiative recombination in GaAsN epilayers GaAsN涂层中辐射复合的性质
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237295
B. Sun, M. Gal, Q. Gao, H. Tan, C. Jagadish
{"title":"Properties of radiative recombination in GaAsN epilayers","authors":"B. Sun, M. Gal, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2002.1237295","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237295","url":null,"abstract":"In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134497244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-quarter-micrometer-like V-gate pseudomorphic doped-channel FETs 类亚四分之一微米的v栅极伪晶掺杂沟道场效应管
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237271
S. Tan, W.T. Chen, M. Chu, W. Lour
{"title":"Sub-quarter-micrometer-like V-gate pseudomorphic doped-channel FETs","authors":"S. Tan, W.T. Chen, M. Chu, W. Lour","doi":"10.1109/COMMAD.2002.1237271","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237271","url":null,"abstract":"This paper reported two reliable and economical methods that one is the using of spin on glass together with re-flowing photoresist to implement 0.4/spl sim/1.5-/spl mu/m U-gate HDCFETs, the other is to employ the wet etching rule to obtain the Sub-quarter-micrometer-like V-gate DCFETs. The measured transconductance available are 225, 250, 275, and 350 mS/mm for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices, respectively. The measured f/sub t/ (f/sub max/) at V/sub GS/=0 V and V/sub DS/=4 V are 22.5(33.5), 16(25), 9.7(20.5), and 7(14) GHz for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115369321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical mode size control by MgO indiffusion in Ti:LiNbO/sub 3/ waveguides MgO在Ti:LiNbO/sub - 3/波导中的扩散控制
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237313
Y. Jayantha, A. Mitchell, M. Austin
{"title":"Optical mode size control by MgO indiffusion in Ti:LiNbO/sub 3/ waveguides","authors":"Y. Jayantha, A. Mitchell, M. Austin","doi":"10.1109/COMMAD.2002.1237313","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237313","url":null,"abstract":"In this paper, the use of magnesium oxide (MgO) indiffusion in combination with Ti:LiNbO/sub 3/ through appropriate control of pre- and post-diffusion parameters is investigated as a way of controlling optical mode size. The co-diffusion of pre-patterned Ti with various patterned MgO films on LiNbO/sub 3/ has been compared experimentally. This method has been applied to study straight waveguides and couplers. The waveguides were optically characterized by near-field mode size and loss measurements methods at a wavelength of 1.55 /spl mu/m. Reduction of inter-mode coupling between adjacent waveguides with the introduction of MgO has been observed.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116251947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes 背照CMOS兼容光电二极管中器件结构对电串扰影响的建模
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237274
S. Hinckley, P. Jansz, E. Gluszak, K. Eshraghian
{"title":"Modelling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes","authors":"S. Hinckley, P. Jansz, E. Gluszak, K. Eshraghian","doi":"10.1109/COMMAD.2002.1237274","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237274","url":null,"abstract":"Standard CMOS fabrication processes provide the means to realize the further development of back illuminated photodiode arrays for imaging systems. We have simulated crosstalk effects in a back illuminated CMOS compatible photodiode array, and compared this effect with that predicted for front illuminated arrays, using a two dimensional simulation model. It was found that the crosstalk in back illuminated arrays is generally greater than that for front illuminated arrays with identical structure, although this effect can be reduced by decreasing the thickness of the array. The n-well junction depth had little effect on the crosstalk predicted for the back illuminated case.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124474830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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