发布求助
文献互助 智能选刊 最新文献

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)最新文献

筛选
英文 中文
Absorption of intense terahertz radiation in InAs/AlSb heterojunction InAs/AlSb异质结对强太赫兹辐射的吸收
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237292
J. Cao, X. Lei
{"title":"Absorption of intense terahertz radiation in InAs/AlSb heterojunction","authors":"J. Cao, X. Lei","doi":"10.1109/COMMAD.2002.1237292","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237292","url":null,"abstract":"We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121236342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and electrical properties of InN grown by radio-frequency sputtering 射频溅射生长的InN的光学和电学性质
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237198
M. Wintrebert-Fouquet, K. Butcher, Motlan
{"title":"Optical and electrical properties of InN grown by radio-frequency sputtering","authors":"M. Wintrebert-Fouquet, K. Butcher, Motlan","doi":"10.1109/COMMAD.2002.1237198","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237198","url":null,"abstract":"InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased dramatically, however Australia remains a pioneering research force in this area. In this paper, we present our latest results on the optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of an In target with pure nitrogen gas. A new aspect of target conditioning is identified as an important growth parameter. A series of samples were grown with different thickness under optimized growth conditions. Films were characterised by X-ray diffraction, atomic force microscopy and Hall measurements. Optical measurements show that films have band gap values close to 2 eV. A comparative study of the optical and electrical properties is reported after removing 100 to 200 nm of the film surface by reactive ion etching.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125155702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots in /sub 0.5/Ga/sub 0.5/As/GaAs量子点中相互扩散的抑制
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237300
L. Fu, P. Lever, H. Tan, C. Jagadish, P. Reece, M. Gal
{"title":"Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots","authors":"L. Fu, P. Lever, H. Tan, C. Jagadish, P. Reece, M. Gal","doi":"10.1109/COMMAD.2002.1237300","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237300","url":null,"abstract":"In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO/sub 2/) film were deposited onto a In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO/sub 2 /film, however the TiO/sub 2/ film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO/sub 2/.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131269676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolution of InGaAs/InP quantum well intermixing as a function of cap layer InGaAs/InP量子阱混合随帽层变化的演化
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237297
C. Carmody, H. Tan, C. Jagadish
{"title":"Evolution of InGaAs/InP quantum well intermixing as a function of cap layer","authors":"C. Carmody, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2002.1237297","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237297","url":null,"abstract":"InP- and InGaAs- capped single In/sub 0.53/Ga/sub 0.47/As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200 /spl deg/C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"1088 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132673768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cat-CVD as a new fabrication technology of semiconductor devices Cat-CVD是一种新型的半导体器件制造技术
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237256
H. Matsumura, A. Izumi, A. Masuda
{"title":"Cat-CVD as a new fabrication technology of semiconductor devices","authors":"H. Matsumura, A. Izumi, A. Masuda","doi":"10.1109/COMMAD.2002.1237256","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237256","url":null,"abstract":"Cat-CVD, often called hot-wire CVD, is a new method to obtain device quality thin films at low substrate temperatures. In the method, gas molecules are decomposed by catalytic cracking reactions on heated catalyzer placed near substrates, instead of plasma decomposition in the conventional plasma enhanced CVD (PECVD). This paper is to review this Cat-CVD from fundamental mechanisms to device application. The features of Cat-CVD are demonstrated with comparison of PECVD.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133199583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electric conductimetric sensor with a thin-layer structure for moisture analysis 具有薄层结构的导电传感器，用于水分分析
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237231
K. Mitsubayashi, Y. Miyoshi, T. Takeuchi, I. Karube
{"title":"Electric conductimetric sensor with a thin-layer structure for moisture analysis","authors":"K. Mitsubayashi, Y. Miyoshi, T. Takeuchi, I. Karube","doi":"10.1109/COMMAD.2002.1237231","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237231","url":null,"abstract":"An electric conductimetric sensor (thickness: 80 /spl mu/m) constructed in a sandwich configuration with a hydrophilic poly-tetrafluoroethylene membrane placed between two gold deposited layers was evaluated for use as a moisture sensor. The humidity level was measured by electrical conductivity of the device using the Multi-frequency LCR-meter at frequencies ranging from 100 Hz to 100 k Hz, the device was calibrated at 100 Hz against the moisture air over the range of 30-85 % RH, which includes normal humidity level in the atmosphere and physiologic air such as breath and sweating. The response sensitivity of the conductimetric device was extremely high (i.e. less than 1 sec. for conductivity shift between humid air of 80 % RH and dried air of -60 /spl deg/C dew point) even for recovery to dried air. The sensor performance was reproducible over multiple measurements, showing the highly reproducibility with a coefficient of variation of 1.77 % (n = 5).","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131866579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of radiative recombination in GaAsN epilayers GaAsN涂层中辐射复合的性质
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237295
B. Sun, M. Gal, Q. Gao, H. Tan, C. Jagadish
{"title":"Properties of radiative recombination in GaAsN epilayers","authors":"B. Sun, M. Gal, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2002.1237295","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237295","url":null,"abstract":"In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134497244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes 背照CMOS兼容光电二极管中器件结构对电串扰影响的建模
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237274
S. Hinckley, P. Jansz, E. Gluszak, K. Eshraghian
{"title":"Modelling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes","authors":"S. Hinckley, P. Jansz, E. Gluszak, K. Eshraghian","doi":"10.1109/COMMAD.2002.1237274","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237274","url":null,"abstract":"Standard CMOS fabrication processes provide the means to realize the further development of back illuminated photodiode arrays for imaging systems. We have simulated crosstalk effects in a back illuminated CMOS compatible photodiode array, and compared this effect with that predicted for front illuminated arrays, using a two dimensional simulation model. It was found that the crosstalk in back illuminated arrays is generally greater than that for front illuminated arrays with identical structure, although this effect can be reduced by decreasing the thickness of the array. The n-well junction depth had little effect on the crosstalk predicted for the back illuminated case.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124474830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Dehydroxylation of UV fused silica slides via laser irradiation 激光照射下紫外熔融石英玻片的脱羟基化
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237283
A. Fernandes, D. Kane, B. Gong, R. Lamb
{"title":"Dehydroxylation of UV fused silica slides via laser irradiation","authors":"A. Fernandes, D. Kane, B. Gong, R. Lamb","doi":"10.1109/COMMAD.2002.1237283","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237283","url":null,"abstract":"Further advances have been made in the development and understanding of an ultraviolet (UV) laser treatment of fused silica glass. Hydroxyl groups present on the surface can be removed by the treatment. The surface hydroxyl groups affect the surface adhesion and performance of silica in catalysis, chromatography, photonics and microelectronics. This work shows that dehydroxylation via laser irradiation is a thermal process. An analysis technique using mass spectrometry has been developed to elucidate and avoid the effect of hydrocarbon contamination, allowing systematic measurements of dehydroxylation to be performed.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133704420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic layer epitaxy of ZnO for substrates for GaN epitaxy GaN外延衬底的ZnO原子层外延
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237178
M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K. Butcher, E. Goldys, T. Tansley, A. Barski
{"title":"Atomic layer epitaxy of ZnO for substrates for GaN epitaxy","authors":"M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K. Butcher, E. Goldys, T. Tansley, A. Barski","doi":"10.1109/COMMAD.2002.1237178","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237178","url":null,"abstract":"ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132994753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书