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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)最新文献

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Complemenatary X-ray diffraction and X-ray reflectivity studies on SiGe and SiGe(C) heterostructures SiGe和SiGe(C)异质结构的互补x射线衍射和x射线反射率研究
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237306
J. F. Woitok
{"title":"Complemenatary X-ray diffraction and X-ray reflectivity studies on SiGe and SiGe(C) heterostructures","authors":"J. F. Woitok","doi":"10.1109/COMMAD.2002.1237306","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237306","url":null,"abstract":"High-resolution X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements were performed and evaluated to study the structural properties of various SiGe/Si and SiGe(C)/Si heterostructures, respectively. The main purpose of the present study was to combine the complementary information content of both X-ray scattering techniques to obtain a sample model that describes both sets of data sufficiently. One main advantage of this combination of techniques is the independent determination of thickness values. XRD in addition is used to evaluate the crystal perfection and interface sharpness of heterostructures. Diffraction patterns of hetero-epitaxial structures contain information about composition and uniformity of epitaxial layers, their thicknesses, the built-in strain and strain relaxation. XRR on the other hand is sensitive to the electron-density profile as a function of depth. It indicates the presence of surface and interface roughness and interlayers regardless of their crystallinity. It is also more sensitive to the near surface region.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126199022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermodynamics of carrier distribution within localized electronic states with a broad Gaussian energy distribution and its effect on luminescence behavior of localized states 具有广泛高斯能量分布的局域电子态载流子分布热力学及其对局域态发光行为的影响
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237202
Q. Li, S. Xu, W. Cheng, M. Xie, S. Tong, H. Yang
{"title":"Thermodynamics of carrier distribution within localized electronic states with a broad Gaussian energy distribution and its effect on luminescence behavior of localized states","authors":"Q. Li, S. Xu, W. Cheng, M. Xie, S. Tong, H. Yang","doi":"10.1109/COMMAD.2002.1237202","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237202","url":null,"abstract":"A new carrier distribution function is derived to describe the the thermodynamics of carriers within localized states with a broad energy distribution. With the aid of this function, several luminescence behaviors, i.e., (1) fast redshift of peak positions at low temperatures; (2) decrease of full-width-at-half-maximum (FWHM) of luminescence band at low temperatures; and (3) blueshift of peak positions at high temperatures, frequently observed in above material systems can be explained. Finally, the model is employed to fit the experimental data of cubic InGaN thin film grown on GaAs. A good agreement between the experimental data and the theoretical fitting is obtained.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126340002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature growth of vertically aligned carbon nanofibres in a low frequency inductively coupled plasma reactor 垂直排列碳纳米纤维在低频电感耦合等离子体反应器中的低温生长
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237221
S. Xu, Z. Tskadze, J. Long, K. Ostrikov, N. Jiang
{"title":"Low temperature growth of vertically aligned carbon nanofibres in a low frequency inductively coupled plasma reactor","authors":"S. Xu, Z. Tskadze, J. Long, K. Ostrikov, N. Jiang","doi":"10.1109/COMMAD.2002.1237221","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237221","url":null,"abstract":"Large area, highly uniform, vertically aligned carbon nanofibres (VACNF) have been grown between 250 to 450/spl deg/C using a high density, low frequency, inductively coupled plasma source in an Ar/H/sub 2//CH/sub 4/ discharge. The dynamic growth process is monitored using an in-situ, high resolution optical emission spectroscope. The growth of VACNFs is carried out on lightly doped silicon (100) substrates, which have been predeposited with nanometer layered Ni/Fe/Mn catalysts. The morphology, crystalline structure and chemical states of the VACNFs are found to have a strong dependence on the growth conditions, in particular on the applied substrate bias and pretreatment of the catalysts. The field emission SEM shows that the CNFs grown with externally applied bias are well aligned and orthogonal to the surface of the substrate. The XRD and Raman spectroscopy analyses suggest that the carbon nanofibres are well graphitized. It is observed that the growth temperature and externally applied bias play a vital role in the transition from carbon nanoparticles to vertically aligned nanofibres. This low temperature and large area growth process offer a great opportunity for the realization of VACNF-based devices.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129691685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A layered SAW based NO/sub 2/ sensor with a copper phthalocyanine selective layer 带铜酞菁选择层的分层SAW型NO/sub /传感器
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237218
S. Ippolito, K. Kalantar-zadeh, W. Wlodarski, K. Galatsis, W. Fischer, O. Berger, H. Stab
{"title":"A layered SAW based NO/sub 2/ sensor with a copper phthalocyanine selective layer","authors":"S. Ippolito, K. Kalantar-zadeh, W. Wlodarski, K. Galatsis, W. Fischer, O. Berger, H. Stab","doi":"10.1109/COMMAD.2002.1237218","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237218","url":null,"abstract":"A multi-layered surface acoustic wave (SAW) transducers have been employed for nitrogen dioxide gas sensing applications. The structure composes of a SiO/sub 2/ guiding layer deposited on a 90/spl deg/ rotated ST-cut quartz crystal substrate with a thin film of copper phthalocyanine acting as the selective layer. The dominant mode of acoustic propagation in the sensor is a combination of mainly a shear and a longitudinal displacement types. Such a structure has the advantage of confining the acoustic wave energy to the surface of the device, which increases the sensitivity of the system.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129752667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
CMOS-compatible process for fibre alignment grooves in silicon 用于硅纤维对准槽的cmos兼容工艺
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237317
J. Chaffey, M. Austin, I. Switala, K. Grant
{"title":"CMOS-compatible process for fibre alignment grooves in silicon","authors":"J. Chaffey, M. Austin, I. Switala, K. Grant","doi":"10.1109/COMMAD.2002.1237317","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237317","url":null,"abstract":"Reactive ion etching is proposed as an alternative to wet etching silicon to form optical alignment grooves for optical interconnection in silicon. The dependence of the etched groove shape as a function of RIE pressure was measured. The groove shape was measured as the degree of groove conformance to a semicircular profile. An optimal pressure of 300 mTorr was determined and the undercutting and depth of the etched grooves as a function of photo-mask was measured.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122330802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Diode-pumped semiconductor disk laser 二极管泵浦半导体圆盘激光器
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237181
E. Schiehlen, F. Antritter, P. Unger
{"title":"Diode-pumped semiconductor disk laser","authors":"E. Schiehlen, F. Antritter, P. Unger","doi":"10.1109/COMMAD.2002.1237181","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237181","url":null,"abstract":"Diode-pumped semiconductor disk lasers are based on the principle of diode-pumped solid-state disk lasers. This relatively new type of laser is also referred to as VECSEL (vertical external cavity surface emitting laser). Semiconductor disk lasers show excellent beam characteristics in combination with high output power. With this novel approach, the current injection problems of VCSELs and the facet degradation effects of edge-emitting lasers due to the high optical intensities at the laser mirrors can be overcome. Furthermore the external cavity of the disk laser can be equipped with additional elements such as nonlinear crystals for frequency doubling, In this paper we present an InAlGaAs-based semiconductor disk laser with intracavity frequency doubling having an output power of 23 m W at 491 nm.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127463492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Integrated semiconductor optical amplifiers for wavelength monitoring and power control in tunable sampled-grating DBR lasers 用于可调谐采样光栅DBR激光器波长监测和功率控制的集成半导体光放大器
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237207
M. Majewski, A. Rakić, L. Coldren, Y. Akulova
{"title":"Integrated semiconductor optical amplifiers for wavelength monitoring and power control in tunable sampled-grating DBR lasers","authors":"M. Majewski, A. Rakić, L. Coldren, Y. Akulova","doi":"10.1109/COMMAD.2002.1237207","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237207","url":null,"abstract":"We report on experimental results obtained for the modal power control and wavelength monitoring in widely tunable (40 nm) sampled-grating DBR (SGDR) lasers using bias current of monolithically integrated semiconductor optical amplifier (SOA).","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130322133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-characteristic impedance transmission line fabricated using benzo-cyclo-butene thin film 用苯并环丁烯薄膜制作的低特性阻抗传输线
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237263
W. Sul, Tea-Sin Kang, A. Dan, Young‐Hoon Chun, Mi-Ra Kim, Sam-Dong Kim, In-Suk Hwang, J. Rhee, G. Ryu
{"title":"Low-characteristic impedance transmission line fabricated using benzo-cyclo-butene thin film","authors":"W. Sul, Tea-Sin Kang, A. Dan, Young‐Hoon Chun, Mi-Ra Kim, Sam-Dong Kim, In-Suk Hwang, J. Rhee, G. Ryu","doi":"10.1109/COMMAD.2002.1237263","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237263","url":null,"abstract":"Transmission lines of very low characteristic impedance (Z/sub 0/) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. Two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z/sub 0/ values for each CPW type are 7.3 and 9.4 /spl Omega/, respectively, at a signal line width of 100 /spl mu/m. When the ratio between the spacing of bottom-ground and the signal line width becomes greater than 2.5, the Z/sub 0/ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z/sub 0/ of 25.5 /spl Omega/, and this impedance is /spl sim/64 % of the values obtained from the BCB-based CPW structures of the same line width.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128615423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Atomic layer epitaxy of ZnO for substrates for GaN epitaxy GaN外延衬底的ZnO原子层外延
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237178
M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K. Butcher, E. Goldys, T. Tansley, A. Barski
{"title":"Atomic layer epitaxy of ZnO for substrates for GaN epitaxy","authors":"M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K. Butcher, E. Goldys, T. Tansley, A. Barski","doi":"10.1109/COMMAD.2002.1237178","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237178","url":null,"abstract":"ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132994753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dehydroxylation of UV fused silica slides via laser irradiation 激光照射下紫外熔融石英玻片的脱羟基化
2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237283
A. Fernandes, D. Kane, B. Gong, R. Lamb
{"title":"Dehydroxylation of UV fused silica slides via laser irradiation","authors":"A. Fernandes, D. Kane, B. Gong, R. Lamb","doi":"10.1109/COMMAD.2002.1237283","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237283","url":null,"abstract":"Further advances have been made in the development and understanding of an ultraviolet (UV) laser treatment of fused silica glass. Hydroxyl groups present on the surface can be removed by the treatment. The surface hydroxyl groups affect the surface adhesion and performance of silica in catalysis, chromatography, photonics and microelectronics. This work shows that dehydroxylation via laser irradiation is a thermal process. An analysis technique using mass spectrometry has been developed to elucidate and avoid the effect of hydrocarbon contamination, allowing systematic measurements of dehydroxylation to be performed.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133704420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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