{"title":"类亚四分之一微米的v栅极伪晶掺杂沟道场效应管","authors":"S. Tan, W.T. Chen, M. Chu, W. Lour","doi":"10.1109/COMMAD.2002.1237271","DOIUrl":null,"url":null,"abstract":"This paper reported two reliable and economical methods that one is the using of spin on glass together with re-flowing photoresist to implement 0.4/spl sim/1.5-/spl mu/m U-gate HDCFETs, the other is to employ the wet etching rule to obtain the Sub-quarter-micrometer-like V-gate DCFETs. The measured transconductance available are 225, 250, 275, and 350 mS/mm for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices, respectively. The measured f/sub t/ (f/sub max/) at V/sub GS/=0 V and V/sub DS/=4 V are 22.5(33.5), 16(25), 9.7(20.5), and 7(14) GHz for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sub-quarter-micrometer-like V-gate pseudomorphic doped-channel FETs\",\"authors\":\"S. Tan, W.T. Chen, M. Chu, W. Lour\",\"doi\":\"10.1109/COMMAD.2002.1237271\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reported two reliable and economical methods that one is the using of spin on glass together with re-flowing photoresist to implement 0.4/spl sim/1.5-/spl mu/m U-gate HDCFETs, the other is to employ the wet etching rule to obtain the Sub-quarter-micrometer-like V-gate DCFETs. The measured transconductance available are 225, 250, 275, and 350 mS/mm for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices, respectively. The measured f/sub t/ (f/sub max/) at V/sub GS/=0 V and V/sub DS/=4 V are 22.5(33.5), 16(25), 9.7(20.5), and 7(14) GHz for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices.\",\"PeriodicalId\":129668,\"journal\":{\"name\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2002.1237271\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237271","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper reported two reliable and economical methods that one is the using of spin on glass together with re-flowing photoresist to implement 0.4/spl sim/1.5-/spl mu/m U-gate HDCFETs, the other is to employ the wet etching rule to obtain the Sub-quarter-micrometer-like V-gate DCFETs. The measured transconductance available are 225, 250, 275, and 350 mS/mm for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices, respectively. The measured f/sub t/ (f/sub max/) at V/sub GS/=0 V and V/sub DS/=4 V are 22.5(33.5), 16(25), 9.7(20.5), and 7(14) GHz for a V-gate, 1.5-/spl mu/m, 1.0-/spl mu/m and 0.6-/spl mu/m U-gate devices.
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