InAs/AlSb异质结对强太赫兹辐射的吸收

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237292

J. Cao, X. Lei

{"title":"InAs/AlSb异质结对强太赫兹辐射的吸收","authors":"J. Cao, X. Lei","doi":"10.1109/COMMAD.2002.1237292","DOIUrl":null,"url":null,"abstract":"We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Absorption of intense terahertz radiation in InAs/AlSb heterojunction\",\"authors\":\"J. Cao, X. Lei\",\"doi\":\"10.1109/COMMAD.2002.1237292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.\",\"PeriodicalId\":129668,\"journal\":{\"name\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2002.1237292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们从理论上研究了InAs/AlSb异质结(HJ)中多光子过程和带间冲击电离对强太赫兹(THz)辐射的自由阱吸收。尽可能多的空穴子带和多光子通道被自一致地考虑。结果表明，太赫兹辐射的幅值越大，频率越低，对电输运特性的影响越大。在辐射频率f/sub / = 0.64 THz时，所得的InAs/AlSb HJ的吸收百分比与实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Absorption of intense terahertz radiation in InAs/AlSb heterojunction

We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

自引率

0.00%

发文量