in /sub 0.5/Ga/sub 0.5/As/GaAs量子点中相互扩散的抑制

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237300

L. Fu, P. Lever, H. Tan, C. Jagadish, P. Reece, M. Gal

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引用次数: 0

摘要

本文通过在In/sub 0.5/Ga/sub 0.5/As/GaAs量子点(QD)结构上沉积掺杂Ga的自旋玻璃(SOG)薄膜和电子束蒸发二氧化钛(TiO/sub 2/)薄膜来抑制相互扩散。结果表明，掺杂ga的SOG只能抑制普通SiO/sub - 2/薄膜促进的无杂质空位无序的发生，而掺杂TiO/sub - 2/薄膜由于热应力效应和GaAs与TiO/sub - 2/之间可能发生的冶金反应抑制了热混合。

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Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots

In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO/sub 2/) film were deposited onto a In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO/sub 2 /film, however the TiO/sub 2/ film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO/sub 2/.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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