2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)最新文献_第2页

Antireflection structure of self-organized GaN nanotips 自组织GaN纳米针尖的抗反射结构

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237197

H. Yoshida, Y. Terada, H. Miyake, K. Hiramatsu

引用次数: 1

Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV region 近紫外和中紫外区透明电极GaN基肖特基势垒紫外探测器的响应性和电学特性

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237204

A. Motogaito, K. Ohta, H. Watanabe, K. Hiramatsu, Y. Ohuchi, K. Tadatomo, Y. Hamamura, K. Fukui

引用次数: 0

Selective laser excitation spectroscopy of gallium and phosphorous in germanium 锗中镓和磷的选择性激光激发光谱

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237286

C. A. Freeth, R. Lewis

引用次数: 0

Physics of electron transport in nitride-based material 氮基材料中电子传递的物理学

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237177

M. Shur

{"title":"Physics of electron transport in nitride-based material","authors":"M. Shur","doi":"10.1109/COMMAD.2002.1237177","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237177","url":null,"abstract":"In AlN/InN/GaN-based semiconductors, the polar optical phonon energy is large (much larger than the thermal energy at room temperature). As a consequence, the dominant optical polar scattering occurs in two steps: photon absorption and re-emission (resulting in an effectively elastic scattering process). In high electric fields, an electron runaway plays a key role in determining the peak field and peak velocity in these compounds. The runaway effects are further enhanced in the two dimensional electron gas at the AlGaN/GaN or AlGaInN-InGaN heterointerfaces. As a result of the runaway and quantization effects, the peak electron drift velocity and peak electric field of the 2D electrons in compound semiconductors are smaller than for the 3D electrons in these materials. In very short (e.g. sub-0.1 micron) GaN-based structures, ballistic and overshoot effects become important. In a deep submicron structures, the ballistic effects in low electric fields reduce an apparent value of the low field mobility because of a finite electron acceleration time in the structure. In long channel devices, the electron mobility in AlGaN/GaN or AIGalnN/InGaN heterostructures at cryogenic temperatures is limited by acoustic scattering, electron transfer from 2D to 3D states, and by the alloy scattering. Relatively high values of the electron mobility and very high values of the 2D electron gas densities in nitride heterostructures also make them attractive candidates for plasma wave electronics devices operating in the terahertz range of frequencies.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128389169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures 突然 MBE 生长的 HgCdTe 异质结构中的少数载流子行为

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237217

R. Sewell, J. Dell, C. Musca, L. Faraone, K. Prince

{"title":"Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures","authors":"R. Sewell, J. Dell, C. Musca, L. Faraone, K. Prince","doi":"10.1109/COMMAD.2002.1237217","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237217","url":null,"abstract":"Steady-state lifetime of photogenerated minority carriers has been investigated in heterostructure HgCdTe devices fabricated on molecular beam epitaxy (MBE) grown material. A wider bandgap capping layer (Hg/sub 1-x/Cd/sub (x)/Te, x = 0.44) was grown on a narrower bandgap absorbing layer (Hg/sub 1-x/Cd/sub (x)/Te, x = 0.32, /spl lambda//sub ca,80 K/ = 4.6 /spl mu/m) material in an uninterrupted MBE growth to create an abrupt heterointerface. Steady-state lifetime as a function of temperature over the range 80 K to 300 K was extracted from photoconductive responsivity at an optical wavelength corresponding to the peak responsivity at that temperature. At 80 K, the photoconductors exhibit a specific detectivity of 4.5 /spl times/ 10/sup 11/ cmHz/sup -1/W/sup -1/ (chopping frequency of 1 kHz). For each measurement temperature, the steady-state excess carrier lifetime determined experimentally was compared to the theoretical bulk lifetime for material with x = 0.32 and effective n-type doping density of 3.7/spl times/ 10/sup 14/ cm/sup -3/. For temperatures below 180 K, the measured lifetime is in agreement with the calculated bulk lifetime for the absorbing layer of /spl sim/12 /spl mu/s; however, for higher temperatures there is evidence of an additional recombination mechanism which reduces the effective lifetime in the material. It is concluded that for temperatures above 180 K. there is significant thermally induced promotion of photogenerated carriers from the narrow bandgap absorbing layer into the wide bandgap capping layer, leading to a reduction in the responsivity of the detector due Io the lower excess carrier lifetime and relatively high doping of the wide bandgap layer.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129338240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser range finding using the self-mixing effect in a vertical-cavity surface emitting laser 利用垂直腔面发射激光器的自混合效应进行激光测距

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237319

J. Tucker, L. Leng, A. Rakić

引用次数: 12

An electrometric method to measure the mechanical parameters of MEMS devices 一种测量MEMS器件力学参数的电计方法

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237232

L. Jiang, Gao Zhong-yu, Dong Jingxin

引用次数: 3

A wavelength sensor using a structure of curved optical waveguide 一种采用弯曲光波导结构的波长传感器

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237235

K. Sae-tang, S. Somkuarnpanit, S. Khuntaweetep

引用次数: 1

Phase characterisation of TiO/sub 2/ thin films using micro-Raman spectroscopy and glancing angle X-ray diffraction 用微拉曼光谱和掠角x射线衍射表征TiO/ sub2 /薄膜的相

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237222

J. Hugmann, B. S. Richards, A. Crosky

引用次数: 7

A photoluminescence of low-K SiOCH films, prepared by PECVD PECVD制备低k SiOCH薄膜的光致发光研究

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237279

V. Ligatchev, T. Wong, Rusli

{"title":"A photoluminescence of low-K SiOCH films, prepared by PECVD","authors":"V. Ligatchev, T. Wong, Rusli","doi":"10.1109/COMMAD.2002.1237279","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237279","url":null,"abstract":"Carbon-doped hydrogenated silicon oxide (SiOCH) low-k films have been prepared using 13.56 MHz discharge in trimethylsilane (3MS) - oxygen gas mixtures at 3, 4, and 5 Torr sustained with RF power densities 1.3 - 2.6 W/cm/sup 2/. The atomic structure of the SiOCH films appears to be a mixture of the amorphous SiO/sub 2/-like and the partially polycrystalline SiC-like phases. Results of the infrared spectroscopy and atomic force microscopy reflect the increment in the volume fraction of the SiC-like phase from 0.22 - 0.28 to 0.36 - 0.39 as the RF power increment. Steady-state near-UV laser-excited (364 nm wavelength, 40/spl plusmn/2 mW) photoluminescence (PL) has been studied at room temperatures in the visible ( 1.8 eV - 3.1 eV) range of photon energies. Two main bands of the PL signal (at the photon energies of 2.5 - 2.6 eV and 2.8 2.9 eV) are observed. Intensities of the both bands are changed non-monotonically with RF power, whereas the bandwidth of /spl sim/0.1 eV remains almost invariable. It is likely that the above lines are originated by the radiative recombination involving D/sub 1/ centres in the crystalline SiC-like phases. Explanation of the PL intensity dependence on the RF power density can be based on results of studies of morphology of the SiOCH films.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115978606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0