近紫外和中紫外区透明电极GaN基肖特基势垒紫外探测器的响应性和电学特性

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237204

A. Motogaito, K. Ohta, H. Watanabe, K. Hiramatsu, Y. Ohuchi, K. Tadatomo, Y. Hamamura, K. Fukui

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引用次数: 0

摘要

描述了透明电极氮化镓基肖特基型紫外探测器从近紫外区到真空紫外区(3.4 ~ 25 eV)的响应光谱和电学特性。为了提高器件在施加反向偏置时的性能，采用了在N/sub /环境下退火的透明肖特基电极。肖特基电极退火后样品的暗电流比退火前样品的暗电流降低了百分之一。通过对肖特基电极的退火，提高了具有反向偏置的响应谱。

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Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV region

Responsivity spectra and electrical characteristics of GaN based Schottky type ultraviolet (UV) photodetectors with transparent electrode from the near UV region to the vacuum ultraviolet (VUV) region (3.4 to 25 eV) are described. In order to improve device performance in applying reverse bias, the annealed transparent Schottky electrode in N/sub 2/ ambient is used. The dark current of samples after annealing Schottky electrode is reduced by hundredth part of that of samples before annealing Schottky electrode. The responsivity spectra with reverse bias are improved by annealing Schottky electrode.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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