Cat-CVD as a new fabrication technology of semiconductor devices

H. Matsumura, A. Izumi, A. Masuda
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引用次数: 1

Abstract

Cat-CVD, often called hot-wire CVD, is a new method to obtain device quality thin films at low substrate temperatures. In the method, gas molecules are decomposed by catalytic cracking reactions on heated catalyzer placed near substrates, instead of plasma decomposition in the conventional plasma enhanced CVD (PECVD). This paper is to review this Cat-CVD from fundamental mechanisms to device application. The features of Cat-CVD are demonstrated with comparison of PECVD.
Cat-CVD是一种新型的半导体器件制造技术
Cat-CVD,通常被称为热线CVD,是一种在低衬底温度下获得器件级薄膜的新方法。在该方法中,气体分子在靠近底物的加热催化剂上通过催化裂化反应分解,而不是在传统的等离子体增强CVD (PECVD)中进行等离子体分解。本文从基本机理到器件应用等方面对Cat-CVD进行了综述。通过与PECVD的比较,说明了Cat-CVD的特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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