Evolution of InGaAs/InP quantum well intermixing as a function of cap layer

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237297

C. Carmody, H. Tan, C. Jagadish

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Abstract

InP- and InGaAs- capped single In/sub 0.53/Ga/sub 0.47/As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200 /spl deg/C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.

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InGaAs/InP量子阱混合随帽层变化的演化

用20 keV和1 MeV的P离子在200 /spl度/C下注入InP-和InGaAs-单In/sub 0.53/Ga/sub 0.47/As/InP量子阱。研究了退火后量子阱辐射的蓝移随注入剂量的变化规律。卢瑟福后向散射通道光谱研究用于监测样品近表面区域产生的损伤。观察到的能量转移与两种体系的损伤积累和缺陷迁移行为有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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