GaAsN涂层中辐射复合的性质

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237295

B. Sun, M. Gal, Q. Gao, H. Tan, C. Jagadish

{"title":"GaAsN涂层中辐射复合的性质","authors":"B. Sun, M. Gal, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2002.1237295","DOIUrl":null,"url":null,"abstract":"In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of radiative recombination in GaAsN epilayers\",\"authors\":\"B. Sun, M. Gal, Q. Gao, H. Tan, C. Jagadish\",\"doi\":\"10.1109/COMMAD.2002.1237295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.\",\"PeriodicalId\":129668,\"journal\":{\"name\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2002.1237295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

基于光致发光信号的上升时间比预期的局域激子的上升时间短两个数量级，我们认为GaAsN薄膜中的辐射复合发生在局域电子和非局域空穴之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Properties of radiative recombination in GaAsN epilayers

In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

自引率

0.00%

发文量