Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits最新文献

{"title":"Direct optical injection locking of InP-based MODFET and GaAs-based HBT oscillators","authors":"M. Karakucuk, W. Li, D. Yang, P. Freeman, J. East, G. Haddad, P. Bhattacharya","doi":"10.1109/CORNEL.1993.303110","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303110","url":null,"abstract":"We have investigated direct optical injection locking and tuning of high frequency oscillators made with GaAs/AlGaAs Heterojunction Bipolar Transistors (HBT's) and 0.25 /spl mu/m gate InGaAs/InAlAs Modulation Doped Field Effect Transistors (MODFET's). We have developed an HBT technology using transparent indium-tin-oxide (ITO) emitter contacts for convenient optical access. Optical injection locking and tuning experiments have been performed on 6 GHz microwave oscillators made with the HBT's. Locking ranges up to 2.5 MHz and tuning ranges up to 25 MHz have been measured with the injection of the optical RF power at 30 dB below the oscillator power level. Similarly, direct subharmonic optical injection locking at 10 and 19 GHz has been achieved with the MMIC InGaAs/InAlAs MODFET oscillators.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"492 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122197372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication, performance and characterization of Si delta-doped FET grown by MBE","authors":"Q. Chen, M. Willander","doi":"10.1109/CORNEL.1993.303091","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303091","url":null,"abstract":"Si delta-doped FETs have been fabricated using low-energy Sb ion doping technique during Si MBE growth to realize delta-doping and a low temperature device processing budget. The FETs with a gate length of 2 /spl mu/m showed a gate breakdown voltage of 3.8-4.7 V and a maximum extrinsic transconductance of 28 mS/mm, corresponding to an intrinsic transconductance of 42 mS/mm. Those results are the best reported so far in Si /spl delta/-FETs of similar gate length. The gate charge-control and low-field drift-mobility in Si /spl delta/-FETs were measured using C-V and I-V techniques. Measured charge-control had a strong nonlinearity and was in good agreement with theoretical calculation. We observed, for the first time, that the drift-mobility in the delta-doped FET was decreased with the increasing gate voltage.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127319523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal management in strongly non-planar microwave HBTs","authors":"J. Schneider, E. Schumacher, U. Erben","doi":"10.1109/CORNEL.1993.303094","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303094","url":null,"abstract":"We have systematically investigated technological parameters of Al/sub 0.3/Ga/sub 0.7/As/GaAs power heterojunction bipolar transistors (HBTs) using finite-element modelling, taking into account the temperature dependence of the semiconductor materials involved and a realistic nonplanar mesa structure. Our calculations include a multilayer structure and raise the question of the magnitude of heat transfer via top metal contacts. Equally important, for the case of multielement power HBTs with close element spacing, the lateral spread of the heat flow is inhibited by the neighbouring elements and the dependence of the thermal resistance on element spacing and substrate thickness can be approximated by a very simple analytical relationship.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125870209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation of optical switches using the Monte Carlo method","authors":"G. Dunn, A. Walker, J. Jefferson, D. Herbert","doi":"10.1109/CORNEL.1993.303092","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303092","url":null,"abstract":"We have calculated the response of a sub-micron GaAs MSM optical switch to light pulses of wavelengths 799 nm, 734 nm and 633 nm. It was found that the response of the total current (including displacement) at 799 nm was characterized by an approximately exponentially decaying current, whilst at 633 nm the current first rose to a peak before falling exponentially again. For the intermediate wavelength, the response was broadly exponential, though interrupted by a peak corresponding to the peak electron photocurrent. The response of the electron photocurrent component was characterized by an initial rapid rise to a peak after about 2 picoseconds, followed by an exponential decay. The initial pulse reached its peak later and was broader for the higher energy radiation, the delayed response being explained by the larger population of electrons raised to the lower symmetry heavier bands at the higher creation energies. The hole response was largely unaffected by the energy of the incident radiation.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130455005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High frequency performance of GaAs/AlGaAs multiple quantum well (MQW) Asymmetric Fabry Perot (ASFP) reflection modulator","authors":"M. Nawaz, B. T. Olsen, K. McIlvaney","doi":"10.1109/CORNEL.1993.303080","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303080","url":null,"abstract":"We report the high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) based Asymmetric Fabry Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was /spl sim/600 MHz at an applied voltage of only 5 V at a wavelength of /spl sim/854 nm.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132596790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extraction of high-frequency equivalent network parameters of HBT's by low-frequency extrapolation of microwave S-parameter data","authors":"E. John, M. B. Das, Li-wu Yang, S. Liu","doi":"10.1109/CORNEL.1993.303079","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303079","url":null,"abstract":"This paper reports a comprehensive low-frequency extrapolation method for the purpose of separating the intrinsic and extrinsic or parasitic equivalent network parameters of high-frequency HBT's. The method involves measurements of the device's small-signal parameters over a wide frequency range, and low-frequency extrapolation (LFE) of various transformed two-port parameters using a range of collector bias currents. For the extraction of the equivalent network parameters, the measured S-parameters are first converted into y- and h-parameters and they are used directly or in composite fashions in order to extract the parasitic series resistance elements (r/sub bb'/, and r/sub ee'/), the shunt capacitance elements (c/sub j/e, c/sub bc/ and c/sub c/), and the intrinsic emitter-to-collector transit time after allowing for the parasitic time constant effects.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121946209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors","authors":"B. Sugeng, C. Wei, J.C.M. Hwang, J. Song, W. Hong, J. Hayes","doi":"10.1109/CORNEL.1993.303068","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303068","url":null,"abstract":"The barrier effects in InP based double heterojunction bipolar transistors have been investigated both theoretically and experimentally. It was found that the gradual saturation of collector current with increasing collector voltage was caused by the collector-base heterojunction barrier. The gain compression with increasing base current was caused by electron accumulation at the collector-base heterojunction. These effects have been included in terms of nonlinear currents and capacitances in an equivalent circuit model for the prediction of DHBT large signal performance. By using an InAlAs emitter and an InP collector with an InGaAs spacer to alleviate these undesirable effects, improvement in microwave power performance was verified.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115334838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the suppression of phonon-electron scattering in short periodic AlAs/GaAs multiple quantum well structures","authors":"T. LeTran, W. Schaff, B. Ridley, Y. Chen, A. Clark, S. O'Keefe, L. Eastman","doi":"10.1109/CORNEL.1993.303076","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303076","url":null,"abstract":"The suppression of longitudinal optical phonon (LOP)-electron scattering was sought in multiple quantum well (MQW) structures. The structures had GaAs well widths=12, 15 and 20 mono layers (ML) and AlAs barrier widths =2 and 4 ML. The MQWs were grown in the channel of GaAs/Al/sub 0.3/Ga/sub 0.7/As modulation doped field effect transistors (MODFETs) without gates. The Hall mobility and carrier sheet density were measured by the van der Pauw method. The Hall mobility of the MQW samples was found to be less than that of the control samples (without MQW) at room temperature, but was better at temperatures lower than 50 K. The reduction of the room temperature mobility was due to interaction of the well electrons with the interface polaritons from the AlAs barriers. The increase of the low temperature mobility was due to reduced remote ionized impurity scattering of the well electrons. The evidence of performance improvement of MQW devices at room temperature due to suppression of electron-LOP scattering is thus disputed by this study. The results of an experiment made elsewhere, which appeared to show the contrary, can be interpreted using arguments other than the suppression of electron-LOP scattering in MQWs.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115837835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High field drift domains in GaAs and InP based heterostructure field effect devices","authors":"E. Kohn, S. Strahle, D. Geiger, U. Erben","doi":"10.1109/CORNEL.1993.303115","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303115","url":null,"abstract":"Modelling the high field drift region of HFET's as a drift capacitance between gate and drain in series with the gate capacitance allows one to estimate the extension of the drift region, which determines feedback and output conductance, thus relating the microwave power gain to the device structure. The technique is applied to various GaAs and InP based FET structures.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116365824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability of strained quantum well lasers","authors":"H. Yoon, Y.C. Chen, L. Davis, H. Sun, K. Zhang, J. Singh, P. Bhattacharya","doi":"10.1109/CORNEL.1993.303106","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303106","url":null,"abstract":"Strained quantum well lasers have demonstrated remarkably improved characteristics compared to unstrained quantum well lasers. For extracting the highest level of performance, the required strain may be large. An important factor in the use of strained quantum wells is the long-term stability of the pseudomorphic active region and the associated reliability of the device. The effect of strain on reliability is investigated, in particular, for In/sub x/Ga/sub 1-x/As/GaAs (x=0.2, 0.25, and 0.3) multiple quantum well lasers in 64 mW/facet constant output power tests at 85/spl deg/C for 40 hours. Laser characteristics such as the operating currents (I/sub op/), the threshold currents (I/sub th/), and the slope efficiencies (dL/dI) are measured during the test and serve as useful degradation parameters. The average changes in I/sub op/ are 15, 9.9, and 0.22%, and the average changes in I/sub th/ at 85/spl deg/C are 21, 8.7, and -1.2% for x=0.2, 0.25, and 0.3, respectively. The average changes in dL/dI at 85/spl deg/C are -19, -14, 1.5%, respectively. Defect migration into the pseudomorphic active region is verified to be the dominant mechanism of degradation observed in these lasers. Hence, to account for the strain-induced reliability improvement, it is necessary to study the propagation of defects in semiconductor heterostructures. A theoretical model is constructed based on the the linear theory of elasticity, and relevant experiments are conducted for its support. Strain energy considerations show that defect propagation across a strained layer is unfavorable. The nonradiative defect densities in the GaAs-Al/sub 0.4/Ga/sub 0.6/As quantum wells with and without the surrounding pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers are compared by measuring the photoluminescence intensities after intentionally creating defects and enhancing their diffusion. The structures with pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers consistently show much higher quantum well photoluminescence intensity by as much as 130 times, thereby confirming our model. These results clearly account for the observed reliability improvement in quantum well lasers with increased strain in the well.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114575976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}