强非平面微波HBTs的热管理

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303094

J. Schneider, E. Schumacher, U. Erben

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引用次数: 0

摘要

我们系统地研究了Al/sub 0.3/Ga/sub 0.7/As/GaAs功率异质结双极晶体管(HBTs)的工艺参数，考虑到半导体材料的温度依赖性和现实的非平面台面结构。我们的计算包括多层结构，并提出了通过顶部金属接触传热的大小的问题。同样重要的是，对于元件间距较近的多单元功率hbt，热流的横向扩散受到邻近元件的抑制，热阻与元件间距和衬底厚度的关系可以用一个非常简单的解析关系来近似表示。

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Thermal management in strongly non-planar microwave HBTs

We have systematically investigated technological parameters of Al/sub 0.3/Ga/sub 0.7/As/GaAs power heterojunction bipolar transistors (HBTs) using finite-element modelling, taking into account the temperature dependence of the semiconductor materials involved and a realistic nonplanar mesa structure. Our calculations include a multilayer structure and raise the question of the magnitude of heat transfer via top metal contacts. Equally important, for the case of multielement power HBTs with close element spacing, the lateral spread of the heat flow is inhibited by the neighbouring elements and the dependence of the thermal resistance on element spacing and substrate thickness can be approximated by a very simple analytical relationship.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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