Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits最新文献_第7页

Metamorphic In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As layer on GaAs: a new structure for millimeter wave ICs 砷化镓上的变质In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As层:毫米波集成电路的新结构

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303125

P. Win, Y. Druelle, A. Cappy, Y. Cordier, D. Adam, J. Favre

{"title":"Metamorphic In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As layer on GaAs: a new structure for millimeter wave ICs","authors":"P. Win, Y. Druelle, A. Cappy, Y. Cordier, D. Adam, J. Favre","doi":"10.1109/CORNEL.1993.303125","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303125","url":null,"abstract":"A new high electron mobility transistor (HEMT) using InAlAs/InGaAs grown on GaAs has been successfully realized. This device, with an In content close to 30%, presents several advantages over conventional pseudomorphic HEMT on GaAs and over lattice matched HEMT on InP. To accommodate the mismatch between the active layer and the GaAs substrate, a metamorphic buffer has been grown at low temperature. High electron mobility with high two dimensional electron gas density (25000 cm/sup 2V.s with 3/spl times/10/sup 12/ cm/sup -2/ at 77 K) as well as high Schottky barrier quality (Vb=0.68 V with /spl eta/=1.1) have been obtained. A device with a 0.4/spl times/150 /spl mu/m/sup 2/ gate geometry has shown a transconductance as high as 700 mS/mm at a current density of 230 mA/mm. The measured f/sub T/ was 45 GHz and f/sub max/ was 115 GHz. These values, showing the great potentiality of this structure, are, to the authors knowledge, the first reported for submicrometer gate metamorphic InAlAs/InGaAs/GaAs HEMTs with an indium content of 30%.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130563408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A hybrid quantum-classical model for transport in tunneling heterostructures 隧穿异质结构中输运的混合量子经典模型

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303081

C. Fernando, W. Frensley

引用次数: 2

Model-based comparison of RF noise in oscillating diamond and SiC MESFETs 基于模型的振荡金刚石和SiC mesfet射频噪声比较

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303118

G. Bilbro, M. Shin, R. Trew, A. Riddle

引用次数: 0

Planar cold cathodes 平面冷阴极

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303097

U. Mishra, Wei-Nan Jiang

{"title":"Planar cold cathodes","authors":"U. Mishra, Wei-Nan Jiang","doi":"10.1109/CORNEL.1993.303097","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303097","url":null,"abstract":"There is a great need for electron sources for a variety of applications, such as klystrons, traveling wave tubes (TWTs), planar panel displays, vacuum triodes, etc.. The cold cathode electron emitters under investigation currently can be basically divided into two types: field emitters and planar emitters. Field emitters are based on the field emission mechanism which was first presented by Fowler and Nordheim in 1928. In planar emitters, electrons are accelerated inside solid state materials by internal electric field. Those electrons which reach the surface with enough kinetic energy to overcome the surface work function could be emitted into vacuum. A lot of work has been done in this area and many planar emitters based on different hot electron generation mechanisms have been described in the past 30 years. To obtain considerable emission efficiency and current density, the solid state surface is usually coated with low work function material (on the order of one mono-layer), such as cesium and cesium oxide. This paper reviews the developments of planar cold cathodes and discusses the characteristics of AlGaAs/GaAs planar doped-barrier electron emitters (PDBEEs) based on the study of their temperature dependent current-voltage (I-V) characteristics.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133092870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0