Metamorphic In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As layer on GaAs: a new structure for millimeter wave ICs

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303125

P. Win, Y. Druelle, A. Cappy, Y. Cordier, D. Adam, J. Favre

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引用次数: 1

Abstract

A new high electron mobility transistor (HEMT) using InAlAs/InGaAs grown on GaAs has been successfully realized. This device, with an In content close to 30%, presents several advantages over conventional pseudomorphic HEMT on GaAs and over lattice matched HEMT on InP. To accommodate the mismatch between the active layer and the GaAs substrate, a metamorphic buffer has been grown at low temperature. High electron mobility with high two dimensional electron gas density (25000 cm/sup 2V.s with 3/spl times/10/sup 12/ cm/sup -2/ at 77 K) as well as high Schottky barrier quality (Vb=0.68 V with /spl eta/=1.1) have been obtained. A device with a 0.4/spl times/150 /spl mu/m/sup 2/ gate geometry has shown a transconductance as high as 700 mS/mm at a current density of 230 mA/mm. The measured f/sub T/ was 45 GHz and f/sub max/ was 115 GHz. These values, showing the great potentiality of this structure, are, to the authors knowledge, the first reported for submicrometer gate metamorphic InAlAs/InGaAs/GaAs HEMTs with an indium content of 30%.<>

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砷化镓上的变质In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As层:毫米波集成电路的新结构

利用生长在GaAs上的InAlAs/InGaAs成功实现了一种新型高电子迁移率晶体管(HEMT)。该器件的In含量接近30%，与GaAs上的传统伪晶HEMT和InP上的晶格匹配HEMT相比，具有几个优势。为了适应有源层和GaAs衬底之间的不匹配，在低温下生长了变质缓冲层。电子迁移率高，二维电子气体密度高(25000 cm/sup 2V)。在77 K时获得了3/spl倍/10/sup 12/ cm/sup -2/ s的高肖特基势垒质量(Vb=0.68 V， /spl eta/=1.1)。在电流密度为230 mA/mm时，具有0.4/spl倍/150 /spl μ /m/sup 2/栅极几何形状的器件显示出高达700 mS/mm的跨导。测得的f/sub T/为45 GHz, f/sub max/为115 GHz。这些值显示了这种结构的巨大潜力，据作者所知，这是亚微米栅变质InAlAs/InGaAs/GaAs hemt的首次报道，铟含量为30%

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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