Planar cold cathodes

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303097

U. Mishra, Wei-Nan Jiang

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Abstract

There is a great need for electron sources for a variety of applications, such as klystrons, traveling wave tubes (TWTs), planar panel displays, vacuum triodes, etc.. The cold cathode electron emitters under investigation currently can be basically divided into two types: field emitters and planar emitters. Field emitters are based on the field emission mechanism which was first presented by Fowler and Nordheim in 1928. In planar emitters, electrons are accelerated inside solid state materials by internal electric field. Those electrons which reach the surface with enough kinetic energy to overcome the surface work function could be emitted into vacuum. A lot of work has been done in this area and many planar emitters based on different hot electron generation mechanisms have been described in the past 30 years. To obtain considerable emission efficiency and current density, the solid state surface is usually coated with low work function material (on the order of one mono-layer), such as cesium and cesium oxide. This paper reviews the developments of planar cold cathodes and discusses the characteristics of AlGaAs/GaAs planar doped-barrier electron emitters (PDBEEs) based on the study of their temperature dependent current-voltage (I-V) characteristics.<>

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平面冷阴极

对于各种应用，如速调管、行波管(twt)、平面面板显示器、真空三极管等，都非常需要电子源。目前研究的冷阴极电子发射体主要分为场发射体和平面发射体两种。场发射器是基于场发射机制，该机制是由Fowler和Nordheim于1928年首次提出的。在平面发射体中，电子在固体材料内部被内部电场加速。那些带着足够动能到达表面以克服表面功函数的电子可以被发射到真空中。在过去的30年里，人们在这方面做了大量的工作，并描述了许多基于不同热电子产生机制的平面发射体。为了获得可观的发射效率和电流密度，通常在固态表面涂覆低功函数材料(单层量级)，如铯和氧化铯。本文综述了平面冷阴极的研究进展，并在研究AlGaAs/GaAs平面掺杂势垒电子发射体(PDBEEs)的温度相关电流-电压(I-V)特性的基础上，讨论了它们的特性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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