Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303118

G. Bilbro, M. Shin, R. Trew, A. Riddle

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Abstract

We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.<>

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基于模型的振荡金刚石和SiC mesfet射频噪声比较

我们报告了在负载下最大功率的谐振电路中振荡的金刚石和碳化硅mesfet的射频振荡器噪声的仿真研究，包括1/f噪声和不完全激活

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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