{"title":"GaAs/AlGaAs多量子阱(MQW)非对称Fabry Perot (ASFP)反射调制器的高频性能","authors":"M. Nawaz, B. T. Olsen, K. McIlvaney","doi":"10.1109/CORNEL.1993.303080","DOIUrl":null,"url":null,"abstract":"We report the high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) based Asymmetric Fabry Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was /spl sim/600 MHz at an applied voltage of only 5 V at a wavelength of /spl sim/854 nm.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High frequency performance of GaAs/AlGaAs multiple quantum well (MQW) Asymmetric Fabry Perot (ASFP) reflection modulator\",\"authors\":\"M. Nawaz, B. T. Olsen, K. McIlvaney\",\"doi\":\"10.1109/CORNEL.1993.303080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) based Asymmetric Fabry Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was /spl sim/600 MHz at an applied voltage of only 5 V at a wavelength of /spl sim/854 nm.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency performance of GaAs/AlGaAs multiple quantum well (MQW) Asymmetric Fabry Perot (ASFP) reflection modulator
We report the high frequency performance of GaAs/AlGaAs multiple quantum well (MQW) based Asymmetric Fabry Perot (ASFP) reflection modulator. The measured frequency response bandwidth of the modulator was /spl sim/600 MHz at an applied voltage of only 5 V at a wavelength of /spl sim/854 nm.<>