Simulation of optical switches using the Monte Carlo method

G. Dunn, A. Walker, J. Jefferson, D. Herbert
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引用次数: 1

Abstract

We have calculated the response of a sub-micron GaAs MSM optical switch to light pulses of wavelengths 799 nm, 734 nm and 633 nm. It was found that the response of the total current (including displacement) at 799 nm was characterized by an approximately exponentially decaying current, whilst at 633 nm the current first rose to a peak before falling exponentially again. For the intermediate wavelength, the response was broadly exponential, though interrupted by a peak corresponding to the peak electron photocurrent. The response of the electron photocurrent component was characterized by an initial rapid rise to a peak after about 2 picoseconds, followed by an exponential decay. The initial pulse reached its peak later and was broader for the higher energy radiation, the delayed response being explained by the larger population of electrons raised to the lower symmetry heavier bands at the higher creation energies. The hole response was largely unaffected by the energy of the incident radiation.<>
用蒙特卡罗方法模拟光开关
我们计算了亚微米GaAs MSM光开关对波长为799 nm、734 nm和633 nm的光脉冲的响应。结果表明,总电流(含位移)在799 nm处的响应近似呈指数衰减,而在633 nm处,电流先上升到峰值,然后再次呈指数下降。对于中间波长,响应大致呈指数型,尽管被一个与峰值电子光电流相对应的峰值打断。电子光电流组分的响应特征是在大约2皮秒后迅速上升到峰值,然后呈指数衰减。初始脉冲达到峰值较晚,并且对于高能量辐射更宽,延迟响应被解释为在较高的创造能量下,更多的电子被提升到较低对称较重的波段。空穴响应在很大程度上不受入射辐射能量的影响。
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