Fabrication, performance and characterization of Si delta-doped FET grown by MBE

Abstract

Si delta-doped FETs have been fabricated using low-energy Sb ion doping technique during Si MBE growth to realize delta-doping and a low temperature device processing budget. The FETs with a gate length of 2 /spl mu/m showed a gate breakdown voltage of 3.8-4.7 V and a maximum extrinsic transconductance of 28 mS/mm, corresponding to an intrinsic transconductance of 42 mS/mm. Those results are the best reported so far in Si /spl delta/-FETs of similar gate length. The gate charge-control and low-field drift-mobility in Si /spl delta/-FETs were measured using C-V and I-V techniques. Measured charge-control had a strong nonlinearity and was in good agreement with theoretical calculation. We observed, for the first time, that the drift-mobility in the delta-doped FET was decreased with the increasing gate voltage.<>