On the suppression of phonon-electron scattering in short periodic AlAs/GaAs multiple quantum well structures

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303076

T. LeTran, W. Schaff, B. Ridley, Y. Chen, A. Clark, S. O'Keefe, L. Eastman

{"title":"On the suppression of phonon-electron scattering in short periodic AlAs/GaAs multiple quantum well structures","authors":"T. LeTran, W. Schaff, B. Ridley, Y. Chen, A. Clark, S. O'Keefe, L. Eastman","doi":"10.1109/CORNEL.1993.303076","DOIUrl":null,"url":null,"abstract":"The suppression of longitudinal optical phonon (LOP)-electron scattering was sought in multiple quantum well (MQW) structures. The structures had GaAs well widths=12, 15 and 20 mono layers (ML) and AlAs barrier widths =2 and 4 ML. The MQWs were grown in the channel of GaAs/Al/sub 0.3/Ga/sub 0.7/As modulation doped field effect transistors (MODFETs) without gates. The Hall mobility and carrier sheet density were measured by the van der Pauw method. The Hall mobility of the MQW samples was found to be less than that of the control samples (without MQW) at room temperature, but was better at temperatures lower than 50 K. The reduction of the room temperature mobility was due to interaction of the well electrons with the interface polaritons from the AlAs barriers. The increase of the low temperature mobility was due to reduced remote ionized impurity scattering of the well electrons. The evidence of performance improvement of MQW devices at room temperature due to suppression of electron-LOP scattering is thus disputed by this study. The results of an experiment made elsewhere, which appeared to show the contrary, can be interpreted using arguments other than the suppression of electron-LOP scattering in MQWs.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

The suppression of longitudinal optical phonon (LOP)-electron scattering was sought in multiple quantum well (MQW) structures. The structures had GaAs well widths=12, 15 and 20 mono layers (ML) and AlAs barrier widths =2 and 4 ML. The MQWs were grown in the channel of GaAs/Al/sub 0.3/Ga/sub 0.7/As modulation doped field effect transistors (MODFETs) without gates. The Hall mobility and carrier sheet density were measured by the van der Pauw method. The Hall mobility of the MQW samples was found to be less than that of the control samples (without MQW) at room temperature, but was better at temperatures lower than 50 K. The reduction of the room temperature mobility was due to interaction of the well electrons with the interface polaritons from the AlAs barriers. The increase of the low temperature mobility was due to reduced remote ionized impurity scattering of the well electrons. The evidence of performance improvement of MQW devices at room temperature due to suppression of electron-LOP scattering is thus disputed by this study. The results of an experiment made elsewhere, which appeared to show the contrary, can be interpreted using arguments other than the suppression of electron-LOP scattering in MQWs.<>

查看原文本刊更多论文

短周期AlAs/GaAs多量子阱结构中声子-电子散射的抑制

在多量子阱(MQW)结构中寻求对纵向光学声子(LOP)-电子散射的抑制。该结构的GaAs阱宽度分别为12、15和20单层(ML)， AlAs势垒宽度分别为2和4 ML。MQWs生长在GaAs/Al/sub 0.3/Ga/sub 0.7/As调制掺杂场效应晶体管(modfet)通道中。采用范德保法测定了霍尔迁移率和载流子片密度。在室温下，MQW样品的霍尔迁移率低于对照样品(不含MQW)，但在低于50 K的温度下，霍尔迁移率更好。室温迁移率的降低是由于阱电子与来自阿拉斯势垒的界面极化相互作用。低温迁移率的提高是由于阱电子的远离杂质散射减少所致。因此，本研究对室温下由于抑制电子lop散射而提高MQW器件性能的证据提出了质疑。在其他地方进行的实验结果似乎显示了相反的结果，可以使用mqw中电子- lop散射抑制以外的论据来解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

自引率

0.00%

发文量