基于inp的MODFET和基于gaas的HBT振荡器的直接光注入锁定

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303110

M. Karakucuk, W. Li, D. Yang, P. Freeman, J. East, G. Haddad, P. Bhattacharya

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引用次数: 1

摘要

我们研究了由GaAs/AlGaAs异质结双极晶体管(HBT’s)和0.25 /spl μ /m栅极InGaAs/InAlAs调制掺场效应晶体管(MODFET’s)制成的高频振荡器的直接光注入锁定和调谐。我们开发了一种使用透明铟锡氧化物(ITO)发射极触点的HBT技术，以方便光学访问。在用HBT制成的6 GHz微波振荡器上进行了光注入锁定和调谐实验。锁定范围可达2.5 MHz，调谐范围可达25 MHz，注入的光射频功率低于振荡器功率水平30 dB。同样，使用MMIC InGaAs/InAlAs MODFET振荡器可以实现10 GHz和19 GHz的直接亚谐波光注入锁定

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Direct optical injection locking of InP-based MODFET and GaAs-based HBT oscillators

We have investigated direct optical injection locking and tuning of high frequency oscillators made with GaAs/AlGaAs Heterojunction Bipolar Transistors (HBT's) and 0.25 /spl mu/m gate InGaAs/InAlAs Modulation Doped Field Effect Transistors (MODFET's). We have developed an HBT technology using transparent indium-tin-oxide (ITO) emitter contacts for convenient optical access. Optical injection locking and tuning experiments have been performed on 6 GHz microwave oscillators made with the HBT's. Locking ranges up to 2.5 MHz and tuning ranges up to 25 MHz have been measured with the injection of the optical RF power at 30 dB below the oscillator power level. Similarly, direct subharmonic optical injection locking at 10 and 19 GHz has been achieved with the MMIC InGaAs/InAlAs MODFET oscillators.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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