High field drift domains in GaAs and InP based heterostructure field effect devices

Abstract

Modelling the high field drift region of HFET's as a drift capacitance between gate and drain in series with the gate capacitance allows one to estimate the extension of the drift region, which determines feedback and output conductance, thus relating the microwave power gain to the device structure. The technique is applied to various GaAs and InP based FET structures.<>